Wafer Producing Apparatus for Hexagonal SiC Ingot Peeling
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Solution Overview
Problem
The existing methods for producing wafers from hexagonal single crystal ingots are inefficient due to manual operations and high material costs, with significant wastage and low productivity, particularly when slicing and polishing hexagonal single crystal SiC ingots.
Innovation Solution
A wafer producing apparatus that automates the process of grinding, peeling, and planarizing wafers using a laser beam to form a peel-off layer, with a carrying tray to support both ingots and wafers, enhancing production efficiency by integrating an ingot grinding unit, laser applying unit, wafer peeling unit, and belt conveyor system.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If manual operations are used for forming peel-off layer, peeling wafer, and grinding ingot, then operation flexibility is maintained, but production efficiency is poor
Solution Approach 1:
The patent replaces manual mechanical operations with an automated system comprising a laser applying unit that uses laser beams to form peel-off layers, and a wafer peeling unit that automatically peels wafers from the ingot. This substitution of manual mechanical operations with automated laser-based and mechanical systems directly resolves the contradiction by significantly improving production efficiency while maintaining precise control over the peeling process.
Solution Approach 2:
The automated wafer producing apparatus enables the system to perform the entire wafer production process autonomously, from laser-induced peel-off layer formation to automatic wafer peeling and stacking. The system serves itself by automatically completing all operations without manual intervention, thereby resolving the contradiction between automation level and production efficiency.
2Productivity
If wire saw slicing is used on hexagonal single crystal SiC ingot, then wafer production is achieved, but slicing time is considerable and productivity is poor
Solution Approach 1:
The patent replaces the traditional mechanical wire saw slicing method with a laser-based approach. The laser applying unit directs laser beams to form peel-off layers within the ingot, and the subsequent peeling process separates wafers rapidly. This substitution eliminates the time-consuming mechanical slicing operation while achieving the same wafer production goal, directly resolving the contradiction between production speed and slicing time.
Solution Approach 2:
The patent changes the fundamental parameter of the cutting mechanism from mechanical (wire saw) to optical (laser). By using laser beams with specific wavelengths that can penetrate and interact with the hexagonal single crystal SiC, the system achieves rapid peel-off layer formation and wafer separation, dramatically reducing the time required for wafer production while maintaining high productivity.
3Loss of substance
If cylindrical semiconductor ingot is sliced by wire saw, then wafer production is achieved, but 70% to 80% of the ingot is discarded
Solution Approach 1:
The patent applies preliminary action by using the laser to form peel-off layers at specific depths within the ingot before the actual wafer separation occurs. This pre-formed layer structure enables precise control over where wafers will be separated, allowing maximum utilization of the ingot material. The preliminary laser treatment ensures that subsequent peeling produces complete wafers with minimal material loss, directly addressing the contradiction between reducing wastage and maintaining manufacturing simplicity.
Solution Approach 2:
The patent changes the ingot geometry parameter from cylindrical to hexagonal, which better matches the desired wafer shape and reduces angular waste. Additionally, the manufacturing method changes from mechanical slicing to laser-induced peeling, enabling precise control over material removal and maximizing ingot utilization. These parameter changes collectively reduce the 70-80% wastage issue while keeping the process straightforward.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus enables automatic production of wafers from hexagonal single crystal ingots, significantly improving production efficiency and reducing material wastage by automating the entire process from ingot preparation to wafer peeling and handling.
Implementation Method 1
laser applying means applying a laser beam of such a wavelength as to be transmitted through the hexagonal single crystal ingot to the hexagonal single crystal ingot, with a focal point of the laser beam positioned inside the hexagonal single crystal SiC ingot, to form a peel-off layer
Implementation Method 2
grinding means for grinding and planarizing an upper surface of the ingot held by the first holding table
Data Source
AI summary
A wafer producing apparatus includes: an ingot grinding unit configured to grind and planarize an upper surface of an ingot held by a first holding table; a laser applying unit configured to apply a laser beam of such a wavelength as to be transmitted through the ingot to the ingot, with a focal point of the laser beam positioned at a depth corresponding to the thickness of a wafer to be produced from an upper surface of the ingot held by a second holding table, to form a peel-off layer; a wafer peeling unit configured to hold the upper surface of the ingot held by a third holding table and peel off the wafer from the peel-off layer; and a carrying tray having an ingot support section configured to support the ingot and a wafer support section configured to support the wafer.