SiC Bonded Substrate Interface Doping for Low Contact Resistance
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Solution Overview
Problem
When SiC single crystal and SiC polycrystal substrates are directly bonded, interface resistance increases, affecting device characteristics.
Innovation Solution
A method involving damaged layer formation, specific element introduction, and thermal treatment to reduce interface resistance by moving the specific element into the damaged layer, using pentavalent elements for N-type semiconductors and trivalent elements for P-type semiconductors, with elements like nitrogen, phosphorus, and aluminum.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If SiC single crystal and SiC polycrystal are directly bonded, then bonding process is simple, but interface resistance increases
Solution Approach 1:
A damaged layer is formed on the bonding surface before bonding occurs, and specific elements are introduced in advance. This preliminary preparation enables the damaged layer to facilitate element diffusion and reduce interface resistance during subsequent bonding, resolving the contradiction between simple bonding process and low interface resistance
Solution Approach 2:
A damaged layer is introduced as an intermediary structure between the SiC single crystal and polycrystal substrates. This damaged layer serves as a mediator that enables controlled diffusion of specific elements (such as aluminum, boron, or gallium) to the bonding interface, thereby reducing interface resistance without complicating the overall bonding process
2Reliability
If damaged layer formation and specific element introduction steps are added, then interface resistance is reduced, but manufacturing process complexity increases
Solution Approach 1:
The damaged layer formation step and specific element introduction step are merged into a unified process sequence that occurs before bonding. By combining these functions in a coordinated manner, the patent reduces interface resistance while minimizing the increase in manufacturing process complexity
Solution Approach 2:
The patent utilizes thermal treatment to change the physical state and promote diffusion of specific elements into the damaged layer. By controlling temperature parameters during thermal treatment, the process achieves effective interface resistance reduction through controlled element diffusion, balancing improved reliability with manageable process complexity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Prevents the occurrence of interface resistance at the bonded interface, enhancing device characteristics by reducing the energy barrier and enabling electron tunneling.
Implementation Method 1
a thermal treatment step for subjecting the bonded semiconductor substrate to a thermal treatment, in which the thermal treatment step is a step of causing the specific element introduced into at least one of the first semiconductor substrate and the second semiconductor substrate to move into the damaged layer
Implementation Method 2
The damaged layer formation step may be a step of forming the damaged layer by performing at least one treatment of ion implantation, neutral element implantation, and plasma irradiation
Data Source
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AI summary
Provided are a semiconductor substrate capable of preventing occurrence of interface resistance at a bonded interface, and a method for manufacturing a semiconductor substrate. A method for manufacturing a semiconductor substrate includes: a damaged layer formation step of forming a damaged layer in at least one of a first bonding target surface of a first semiconductor substrate and a second bonding target surface of a second semiconductor substrate; a specific element introduction step of introducing a specific element into at least one of the first bonding target surface and the second bonding target surface; a bonding step of bonding the first bonding target surface and the second bonding target surface together to form a bonded semiconductor substrate having a bonded interface; and a thermal treatment step of subjecting the bonded semiconductor substrate to a thermal treatment, in which the thermal treatment step is a step of causing the specific element introduced into at least one of the first semiconductor substrate and the second semiconductor substrate to move into the damaged layer.