SiC Interposer Architecture With In-Situ Connectors for Dense IC Packaging
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Solution Overview
Problem
Current integrated circuit interposers face limitations in interconnect density, conductivity, and heat dissipation, which hinder the advancement of high-density and high-performance electronic packaging.
Innovation Solution
The development of a silicon carbide (SiC) interposer with in-situ formed carbon electrical or optical waveguide connectors, enhanced by laser irradiation, to create a high-density interconnect system that also functions as a heat sink for integrated circuit dies, utilizing hybrid materials and quantum conversion patterning for improved thermal and electrical performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If silicon interposers are used for interconnection, then integrated circuits can be closely mounted and interconnected, but interconnect density and conductivity are limited
Solution Approach 1:
The patent changes the material parameter from conventional silicon to silicon carbide, which has superior thermal and electrical properties. This material substitution enables higher interconnect density while maintaining enhanced conductivity through the intrinsic properties of SiC, resolving the contradiction between density and conductivity limitations of traditional silicon interposers
Solution Approach 2:
The patent employs composite material structures including silicon carbide interposers with integrated carbon connectors and metal traces. This composite approach combines the high thermal conductivity of SiC with the electrical conductivity of carbon and metal materials, achieving both high interconnect density and superior conductivity simultaneously
2Reliability
If conventional interposers are used, then electrical communication between integrated circuits is achieved, but heat dissipation capability is insufficient
Solution Approach 1:
The silicon carbide interposer serves multiple functions simultaneously: it provides electrical communication pathways through carbon connectors and metal traces, while also acting as a heat dissipation substrate due to SiC's high thermal conductivity. This multi-functionality resolves the contradiction by integrating both electrical and thermal management capabilities into a single component
Solution Approach 2:
The silicon carbide material acts as an intermediary between the integrated circuits and the substrate, facilitating both electrical signal transmission and thermal energy transfer. The carbon connectors and metal traces within the SiC interposer mediate the electrical communication, while the SiC matrix itself mediates heat dissipation from the circuits to the substrate
3Quantity of substance
If through vertical conductors and horizontal conductors are used for interconnection, then integrated circuits can be interconnected, but device complexity increases
Solution Approach 1:
The patent merges the functions of vertical through-silicon vias and horizontal redistribution layers into an integrated carbon connector system within the silicon carbide interposer. This consolidation reduces the number of discrete interconnection components and simplifies the manufacturing process while maintaining comprehensive interconnect capability between integrated circuits
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution provides superior interconnect density, conductivity, and heat dissipation capabilities, enabling more efficient thermal management and electrical connectivity for integrated circuits, supporting higher performance and density in electronic packaging.
Implementation Method 1
enhanced by laser irradiation, to create a high-density interconnect system
Implementation Method 2
utilizing hybrid materials and quantum conversion patterning for improved thermal and electrical performance
Implementation Method 3
functions as a heat sink for integrated circuit dies
Data Source
AI summary
An apparatus and a method of making are disclosed for an improved interposer comprises a wide bandgap semiconductor interposer such as silicon carbide (SiC) with a plurality of connectors formed in situ within the interposer for connecting the integrated circuit die to the substrate. The plurality of connectors may include carbon electrical connectors and/or optical wave guide connectors formed an angle within the interposer. The improved interposer may include a with the integrated circuit die disposed in the recess and thermally coupled to the silicon carbide (SiC) interposer for providing a heat sink for the integrated circuit die. A first and a second recess may be formed in separate surfaces of the silicon carbide (SiC) interposer enabling multiple interposers to be stacked upon one another.