Thin SiC Layer Transfer Using Carrier Bonding and Laser Separation
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Solution Overview
Problem
Existing techniques face challenges in processing relatively thin semiconductor layers, which are difficult to handle and often require expensive materials, leading to production delays and inefficiencies in electronic device fabrication.
Innovation Solution
A process involving bonding a carrier substrate to a donor substrate, generating a laser damage zone, and separating the processing substrate and device portion from the donor substrate to create a thin semiconductor layer suitable for electronic devices, using materials like SiC that can withstand high temperatures and processing conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If relatively thin layers of semiconductor material are produced from a thick substrate, then material cost is reduced, but the thin layers become difficult to process using typical fabrication processes
Solution Approach 1:
A carrier substrate is introduced as an intermediary to support the thin semiconductor layer during fabrication. The carrier substrate provides mechanical strength and stability, enabling the thin layer to withstand processing steps without damage. After fabrication, the carrier substrate is removed, leaving the processed thin semiconductor layer.
Solution Approach 2:
The semiconductor layer is bonded to the carrier substrate before fabrication begins. This preliminary bonding provides structural support that enables subsequent fabrication steps to be performed successfully on the thin layer, which would otherwise be too fragile to process.
2Reliability
If expensive semiconductor materials are used, then product quality is improved, but production cost increases and material shortages cause delays
Solution Approach 1:
Instead of using expensive semiconductor materials for the entire substrate, only a thin layer of semiconductor material is transferred to the carrier substrate. This thin layer contains the essential semiconductor properties needed for device fabrication, while the bulk of the expensive material is eliminated, reducing cost and availability concerns.
Solution Approach 2:
Only the necessary thin layer of semiconductor material is extracted from the thick substrate and transferred to the carrier substrate. This extraction removes the excess expensive material while retaining the functional semiconductor layer needed for device fabrication.
3Quantity of substance
If thin semiconductor layers are produced, then material usage is optimized, but processing difficulty increases leading to production inefficiencies
Solution Approach 1:
The carrier substrate acts as a mediator that enables efficient processing of thin semiconductor layers. By providing mechanical support during fabrication, the carrier substrate allows standard fabrication processes to be used without special handling procedures, maintaining high production efficiency while using optimized amounts of semiconductor material.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the production of robust, thin semiconductor layers that can withstand semiconductor fabrication processes, reducing material costs and improving production efficiency for electronic devices.
Implementation Method 1
generating a laser damage zone within the donor substrate
Data Source
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AI summary
In an aspect, a process can include bonding a carrier substrate to a first major surface of a donor substrate; generating a laser damage zone within the donor substrate; bonding a processing substrate to a second major surface of the donor substrate, wherein the second major surface is opposite the first major surface; and separating (1) the processing substrate and a device portion of the donor substrate and (2) the carrier substrate and a remaining portion of the donor substrate from each other. In another aspect, an electronic device can include a device portion of a SiC substrate, wherein the device portion includes at least part of an electronic circuit element. A processing substrate can be bonded the device portion, wherein the processing substrate can withstand processing conditions when fabricating the electronic device.