Silicon Carbide Layer Transfer for Lower-Cost Compound Substrates
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Solution Overview
Problem
The high cost and environmental impact of producing monocrystalline silicon carbide substrates for semiconductor devices due to complex processing steps and high carbon footprint, limiting widespread adoption of silicon carbide semiconductors for power electronics.
Innovation Solution
A method of repeatedly detaching layers from a silicon carbide substrate and bonding them to a less expensive carrier substrate, forming a compound semiconductor layered structure with a porous core and nonporous top layer, which is then subjected to heat treatment above 1200°C to create a cost-effective and energy-efficient semiconductor layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If monocrystalline silicon carbide substrates are produced using conventional crystal growth and slicing methods, then high material quality is achieved, but production cost and environmental impact increase significantly
Solution Approach 1:
The invention segments the expensive monocrystalline silicon carbide substrate into reusable thin layers that can be detached and transferred to cheaper carrier substrates. The layer detachment process allows the expensive material to be separated into functional segments that can be reused multiple times, reducing the cost per device while maintaining material quality.
Solution Approach 2:
The invention recovers and reuses the expensive monocrystalline silicon carbide material by detaching layers from the original substrate and transferring them to carrier substrates. Instead of discarding the expensive substrate after single-use, the system recovers the valuable material layers for multiple reuse cycles, significantly reducing production cost and waste.
2Reliability
If conventional substrate processing methods are used, then monocrystalline semiconductor layers are produced, but material and energy consumption increase
Solution Approach 1:
The invention performs preliminary actions by detaching and transferring semiconductor layers to carrier substrates before final device fabrication. This preliminary separation allows subsequent processing to be performed on the transferred layers using less energy-intensive methods compared to processing thick monocrystalline substrates, reducing overall energy consumption while maintaining layer quality.
Solution Approach 2:
The invention extracts the essential semiconductor layer from the expensive, energy-intensive monocrystalline substrate and transfers it to a cheaper carrier. This extraction allows the functional semiconductor material to be separated from the energy-intensive substrate structure, enabling more energy-efficient subsequent processing while preserving layer quality.
3Ease of repair
If traditional substrate reuse methods are attempted, then material economy improves, but layer detachment and transfer complexity increases
Solution Approach 1:
The invention introduces carrier substrates as intermediaries that facilitate the transfer and reuse of semiconductor layers. These carrier substrates act as mediators between the original monocrystalline substrate and the final device structure, enabling layer detachment and transfer through controlled interfaces that reduce overall process complexity despite enabling material reuse.
4Reliability
If monocrystalline silicon carbide substrates are used directly, then device performance is maintained, but waste generation and carbon footprint increase
Solution Approach 1:
The invention recovers and reuses the monocrystalline silicon carbide material layers multiple times by detaching them from the original substrate and transferring to carrier substrates. This recovery process eliminates the need to continuously produce new monocrystalline substrates, significantly reducing waste generation and the carbon footprint associated with crystal growth and substrate manufacturing while maintaining device performance.
Solution Approach 2:
The invention applies local quality by transferring only the necessary semiconductor layers to carrier substrates rather than reusing entire thick substrates. This selective transfer of functional layers reduces the mass of material requiring processing and disposal, lowering the carbon footprint while maintaining the local quality and performance characteristics of the semiconductor active layers.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces material and energy consumption, decreases waste generation, and allows for the production of semiconductor layers with improved carbon dioxide footprint, enabling more economical and sustainable production of silicon carbide semiconductors for power electronics.
Implementation Method 1
a porous semiconductor film in contact with a semiconductor substrate is subjected to a heat treatment at a temperature above 1200° C. to form a compound semiconductor layered structure
Data Source
AI summary
The present invention provides compound semiconductor layered structures comprising a semiconductor substrate having a bottom layer and a top layer; and a semiconductor film on top of said semiconductor substrate, said semiconductor film comprising a bottom layer, a core and a top layer, whereby said bottom layer of said semiconductor film is in contact with said top surface of said semiconductor substrate, and wherein said top layer is nonporous. Preferred compound semiconductors further comprise a semiconductor overlayer having a bottom surface layer and a top surface layer, whereby said bottom surface layer of said second semiconductor layer is in contact with said top layer of said semiconductor film. The present invention also provides process for preparing the same.