SiC Material Low Thermal Conductivity Wafer Temperature Uniformity
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Solution Overview
Problem
Conventional CVD SiC materials with large crystal grains exhibit high thermal conductivity, leading to temperature non-uniformity in semiconductor wafers during low-temperature processes, which affects chip yield and quality.
Innovation Solution
A SiC material with a low thermal conductivity region having an average crystal grain size of 3.5 μm or less and preferential (111) plane growth, achieved through the CVD method, allowing for adjusted thermal conductivity and uniform temperature distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If conventional CVD SiC material with large crystal grains is used, then thermal conductivity is high which is good for heat emission, but temperature non-uniformity increases in low-temperature semiconductor processes
Solution Approach 1:
The patent changes the crystal grain size parameter from large (7-15 μm) to fine (3-10 μm average size) to adjust thermal conductivity. By controlling the crystal growth parameters during CVD process, the material achieves reduced thermal conductivity while maintaining structural integrity, thereby resolving the temperature non-uniformity issue in low-temperature semiconductor processes
2Temperature
If crystal grain size is reduced to lower thermal conductivity, then temperature uniformity improves, but manufacturing complexity increases
Solution Approach 1:
The patent modifies CVD process parameters including temperature, pressure, and gas flow rates to control crystal grain growth. By optimizing these parameters, fine crystal grains (3-10 μm) are achieved through a controlled manufacturing process rather than complex post-processing, thus improving temperature uniformity while managing manufacturing complexity
Solution Approach 2:
The patent incorporates crystal grain size control directly into the CVD deposition process itself, rather than requiring subsequent processing steps. The preliminary control of nucleation and growth conditions during deposition ensures fine crystal grain structure is formed in-situ, simplifying the overall manufacturing流程
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The SiC material with reduced thermal conductivity enables uniform temperature distribution across wafers, improving semiconductor chip yield and quality by reducing temperature deviations and enhancing etching uniformity.
Implementation Method 1
is a (111) plane preferential growth in X-ray diffraction analysis
Implementation Method 2
low thermal conductivity region which has an average crystal grain size of 3.5 μm or less, and is a (111) plane preferential growth
Implementation Method 3
the low thermal conductivity region may be deposited by a CVD method
Data Source
AI summary
Described herein are an SiC material and a method for manufacturing same. The SiC material includes an SiC layer having a low thermal conductivity region formed in at least a portion thereof, wherein the low thermal conductivity region has an average crystal grain size of 3.5 μm or less and (111) plane preferential growth according to X-ray diffraction analysis.