SiC Semiconductor Metal Adhesion Barrier Structure
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Solution Overview
Problem
Current metallization technologies in semiconductor devices face challenges in maintaining reliable metal adhesion and barrier characteristics over time, prone to defects and particle damage, which affects the integrity of current transport and heat removal.
Innovation Solution
A semiconductor device with a metal adhesion and barrier structure comprising layers of titanium and tungsten, and titanium tungsten nitride, or aluminum with Ti/TiN, is implemented to enhance adhesion and prevent metal diffusion, using techniques like chemical vapor deposition to form these layers and improve defect screening.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a simple metal adhesion and barrier structure is used, then device complexity is reduced, but reliability of metal adhesion and barrier characteristics deteriorates over time
Solution Approach 1:
The metal adhesion and barrier structure is segmented into multiple distinct layers: a first layer comprising titanium and tungsten, and a second layer comprising titanium, tungsten, and nitrogen. This segmentation allows each layer to perform specific functions - the first layer provides adhesion while the second layer provides barrier properties - thereby improving overall reliability without requiring a single complex material system
Solution Approach 2:
The patent employs composite material structures where the first layer is a titanium-tungsten alloy and the second layer is a titanium-tungsten-nitride compound. These composite materials combine the beneficial properties of different elements to achieve both strong adhesion and effective diffusion barrier characteristics, resolving the contradiction between simple structure and high reliability
2Reliability
If a single-layer metal adhesion and barrier structure is used, then manufacturing process is simplified, but ability to screen barrier defects and resist particle damage deteriorates
Solution Approach 1:
The barrier structure is divided into two layers with different compositions and functions. The first layer (titanium and tungsten) and second layer (titanium, tungsten, and nitrogen) create multiple interfaces and pathways for defect detection. This segmentation enables better screening of barrier defects as each layer can be independently characterized and tested for integrity
Solution Approach 2:
By adding the nitrogen component to create the second layer, the patent introduces a compositional dimension that enhances defect detection capability. The nitrogen-containing layer provides different electrical and physical properties that make defect screening more effective, adding a new dimension to the barrier structure's functionality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed solution significantly improves the reliability of metal adhesion and barrier characteristics, reducing metal diffusion and enhancing defect coverage, thereby ensuring stable current transport and heat management in semiconductor devices.
Implementation Method 1
Metal adhesion and barrier structures aim at providing adhesion between metallization and a support structure such as a semiconductor body and preventing metal atoms from diffusing from the metal structure into a semiconductor substrate
Implementation Method 2
using techniques like chemical vapor deposition to form these layers
Data Source
AI summary
According to an embodiment of a semiconductor device, the semiconductor devices includes a metal structure electrically connected to a silicon carbide semiconductor body and a metal adhesion and barrier structure between the metal structure and the silicon carbide semiconductor body. The metal adhesion and barrier structure includes a layer comprising titanium and tungsten.