SiC MOSFET Channel Width Density via Multi-Directional Doped Regions
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Solution Overview
Problem
Silicon carbide (SiC) MOSFETs face challenges due to low channel mobility, which increases channel resistance and contributes significantly to the total on-resistance, hindering the performance of SiC semiconductor devices.
Innovation Solution
The silicon carbide semiconductor device incorporates a unique doped region structure with leg, body, and arm portions, along with a gate insulator and source electrode configuration, to enhance channel width density and reduce channel resistance, thereby improving device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional SiC MOSFET structure is used, then device can operate at high temperatures, but channel resistance accounts for significant part of total on-resistance due to low channel mobility
Solution Approach 1:
The first doped region is divided into multiple segments including first leg portions, body portions, and first arm portions that extend in different directions. This segmentation creates multiple channel regions between p-n junctions, effectively increasing the total channel width density and reducing channel resistance while maintaining the device's high temperature operation capability
Solution Approach 2:
The doped regions extend in multiple directions (first direction and second direction perpendicular to each other), creating a three-dimensional network structure. This multi-dimensional approach increases channel width density without increasing the device footprint, thereby reducing channel resistance while preserving thermal stability
2Object-affected harmful factors
If channel width density is increased to reduce channel resistance, then device performance improves, but device structure becomes more complex
Solution Approach 1:
The first doped region serves multiple functions simultaneously: it forms p-n junctions for channel definition, creates JFET regions for voltage control, and provides structural framework through its multi-directional portions. This multi-functionality achieves high channel width density without proportionally increasing structural complexity
Solution Approach 2:
Multiple doped regions (first doped region, second doped region, third doped regions) are merged into an integrated structure where they work together to define channels and control electrical properties. This consolidation achieves complex functionality through coordinated simple elements rather than separate complex components
Data Source
AI summary
A silicon carbide semiconductor device includes a first doped region including a plurality of first leg portions, a plurality of body portions, and a plurality of first arm portions. The first leg portions are extending along a second direction, the body portions connect at least two of the first leg portions, and the first arm portions are extending along a first direction and connecting at least two of the first leg portions. A second doped region includes a plurality of second leg portions, a plurality of source portions, and a plurality of second arm portions. The second leg portions are extending along the second direction, the source portions are arranged in the body portions and connecting at least two of the second leg portions, and the second arm portions are extending along the first direction and connecting at least two of the second leg portions.