SiC MOSFET Gaussian Filter EMI Control

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Solution Overview

Problem

Current EMI shielding solutions for switching converters in vehicles are inadequate as they either fail to fully insulate against electromagnetic interference (EMI) or are undesirable, necessitating a more effective method to balance switching loss and EMI.

Innovation Solution

Implementing a dynamic Gaussian filter standard deviation variation system that adjusts the Silicon Carbide (SiC) Mosfet transistor based on calculated switching loss and EMI predictions, using a computing device to determine a Gaussian switching voltage reference and optimize the switching waveform to control EMI and loss.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-affected harmful factors

If EMI shielding is installed to block electromagnetic interference from switching converters, then EMI protection is improved, but device complexity and undesirability increase

Engineering Contradiction:
ImproveEMI protectionVSAvoidshielding structure
Core Design Contradiction:
Object-affected harmful factorsVSDevice complexity

Solution Approach 1:

The patent extracts the EMI filtering function from physical shielding structures and implements it through software-based Gaussian filter processing of the switching waveform. The harmful EMI frequencies are identified and removed through digital signal processing rather than physical barriers, eliminating the need for complex shielding structures while maintaining EMI protection.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent replaces mechanical/physical EMI shielding with an electronic/software-based filtering system. Instead of using physical shields to block electromagnetic interference, the system uses Gaussian filter algorithms to process and clean the switching waveform, substituting a non-mechanical solution for the traditional mechanical shielding approach.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Loss of energy

If switching loss is reduced by optimizing switching converter parameters, then energy efficiency is improved, but EMI generation may increase

Engineering Contradiction:
Improveswitching lossVSAvoidEMI generation
Core Design Contradiction:
Loss of energyVSObject-generated harmful factors

Solution Approach 1:

The patent implements a feedback mechanism where the Gaussian filter continuously processes the switching waveform and provides cleaned reference waveforms back to the switching converter control. This closed-loop feedback allows the system to maintain optimal switching parameters for energy efficiency while the filter compensates for any EMI-generating distortions in real-time.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The patent dynamically adjusts the Gaussian filter parameters (standard deviation) to optimize the balance between switching loss and EMI generation. By changing the filter parameters based on operating conditions, the system can maintain energy efficiency while suppressing EMI across different loading and switching scenarios.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentUS9672582B2Systems and methods for Gaussian filter standard deviation variation
Publication Date: 2017.06.06 TOYOTA JIDOSHA KK
  • US9672582B2 patent drawing
  • US9672582B2 patent drawing
  • US9672582B2 patent drawing

AI summary

Systems and methods for Gaussian filter standard deviation variation. One embodiment of a method includes receiving a load current and a drain voltage associated with a switching converter that includes a Silicon Carbide (SiC) Mosfet transistor, determining a derivative of the drain voltage with respect to time, and calculating a switching loss associated with the switching converter. Some embodiments include predicting electromagnetic interference (EMI), selecting a Gaussian standard deviation from the switching loss, and determining a Gaussian switching voltage reference. Still some embodiments include adjusting a component of the SiC Mosfet transistor, based on the Gaussian standard deviation, and the Gaussian switching voltage reference to provide a desired switching loss.