SiC MOSFET with Integrated Poly-Silicon Diode for Temperature Sensing
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Solution Overview
Problem
Existing semiconductor devices using silicon carbide for high-voltage applications require external current sources for temperature sensing, increasing the number of external components and reducing reliability.
Innovation Solution
A semiconductor device with a built-in temperature sensing diode integrated into the same silicon carbide substrate as the main semiconductor element, eliminating the need for an external current source by using a poly-silicon diode structure that is voltage-driven by the gate threshold voltage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a temperature sensing diode is arranged on the same semiconductor substrate as the semiconductor element, then temperature detection capability is improved, but the number of external components increases and reliability decreases
Solution Approach 1:
The patent combines the temperature sensing diode and the semiconductor element into a single integrated structure on the same semiconductor substrate. The diode is formed by creating a pn junction within the semiconductor substrate itself, merging the sensing function with the structural substrate, thereby eliminating external components while maintaining temperature detection capability
Solution Approach 2:
The semiconductor substrate serves multiple functions: it acts as both the structural base for the semiconductor element and as the medium containing the temperature sensing diode. This multi-functionality allows the substrate to provide both mechanical support and temperature sensing capabilities, reducing the need for separate external components
2Measurement precision
If a temperature sensing diode is arranged on the same semiconductor substrate as the semiconductor element, then temperature detection capability is improved, but device complexity increases
Solution Approach 1:
The patent merges the temperature sensing diode structure with the semiconductor substrate by forming the pn junction directly within the substrate material. This integration approach combines multiple functions into a unified structure, reducing overall device complexity while maintaining temperature detection capability
Solution Approach 2:
The temperature sensing diode is nested within the semiconductor substrate structure. The pn junction is formed inside the substrate, with the diode structure contained within the larger semiconductor element framework, creating a compact nested arrangement that simplifies the overall device architecture
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces the number of external components, enhances reliability, and allows for precise temperature detection without external current sources, improving the overall performance and reliability of the semiconductor device.
Implementation Method 1
a diode arranged in the semiconductor substrate, the diode detecting a temperature of the semiconductor element
Data Source
AI summary
A main semiconductor element and a temperature sensing part are arranged on a single silicon carbide base. The main semiconductor element is a vertical MOSFET and the temperature sensing part is a horizontal diode. An anode region of the temperature sensing part and an n+-type source region and a p+-type contact region of the main semiconductor element are connected by wiring by an anode electrode on a front surface of the silicon carbide base. The temperature sensing part, when the main semiconductor element is ON, is forward biased by drift current flowing in the main semiconductor element. The temperature sensing part, for example, is a poly-silicon diode constituted by a p-type poly-silicon layer and an n-type poly-silicon layer arranged on the front surface of the silicon carbide base. With such configuration, a semiconductor device having high reliability may be provided.