SiC MPS Diode Contact Structure to Prevent Schottky Short Circuits
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Solution Overview
Problem
Existing MPS devices face issues with short circuits due to unwanted conductive regions formed during the manufacturing process, leading to loss of diode characteristics and failure, particularly in high-frequency applications.
Innovation Solution
Incorporation of a semiconductor layer, such as MoS2, with selectively doped regions to form ohmic and Schottky contacts, which modifies conductivity and avoids unwanted reactions, thereby preventing short circuits and ensuring proper device functionality.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional manufacturing processes are used for MPS devices, then the manufacturing process is simpler, but unwanted conductive regions form causing short circuits and loss of diode characteristics
Solution Approach 1:
A semiconductor layer (such as MoS2) is formed on the drift layer surface before the nickel deposition step. This preliminary action prevents unwanted conductive regions from forming during subsequent manufacturing steps, thereby avoiding short circuits and maintaining diode characteristics without significantly complicating the overall process
Solution Approach 2:
The semiconductor layer acts as an intermediary material between the drift layer and the nickel contact layer. This intermediate layer prevents direct unwanted reactions between nickel and the drift layer, eliminating the formation of unwanted conductive regions while allowing proper ohmic and Schottky contact formation
2Manufacturing precision
If a semiconductor layer with selective doping is incorporated, then unwanted reactions are avoided and short circuits prevented, but the manufacturing process becomes more complex
Solution Approach 1:
The semiconductor layer is selectively doped to create different regions with different electrical properties. First regions are doped to form ohmic contacts with the drift layer, while second regions maintain different conductivity to form Schottky contacts with nickel. This local differentiation ensures precise control over contact characteristics and prevents unwanted conduction paths
Solution Approach 2:
The device structure incorporates a composite material system consisting of the drift layer, the semiconductor layer (such as MoS2), and the nickel contact layer. This composite structure leverages the specific properties of each material to achieve both proper electrical contacts and prevention of unwanted reactions, maintaining manufacturing precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the reliability and performance of MPS devices by maximizing IFSM ruggedness and simplifying the manufacturing process, while avoiding protrusions and Nickel residues, thus maintaining the integrity of the diode characteristics.
Implementation Method 1
selectively doped regions to form ohmic and Schottky contacts, which modifies conductivity
Data Source
AI summary
Merged-PiN-Schottky, MPS, device comprising: a solid body having a first electrical conductivity; an implanted region extending into the solid body facing a front side of the solid body, having a second electrical conductivity opposite to the first electrical conductivity; and a semiconductor layer extending on the front side, of a material which is a transition metal dichalcogenide, TMD. A first region of the semiconductor layer has the second electrical conductivity and extends in electrical contact with the implanted region, and a second region of the semiconductor layer has the first electrical conductivity and extends adjacent to the first region and in electrical contact with a respective surface portion of the front side having the first electrical conductivity.