SiC MPS Diode Junction Formation Using a TMD Interlayer

A semiconductor layer (such as MoS2) is introduced as an intermediary between the nickel ohmic contact and the silicon carbide drift layer. This intermediate layer prevents direct contact between nickel and silicon, thereby eliminating the harmful nickel-silicon reactions that create unwanted conductive regions, while still allowing effective electrical contact to be formed.

The problematic direct interaction between nickel and silicon is extracted or separated by removing the direct contact interface. The semiconductor layer acts as a buffer that extracts nickel from direct contact with silicon, preventing the formation of harmful reaction products while maintaining the necessary electrical functionality.

The semiconductor layer is not uniformly structured but has locally varied conductivity properties. Different regions of the semiconductor layer have different conductivity characteristics tailored to their specific functional requirements - providing electrical isolation where needed while maintaining conductive pathways where required. This local differentiation allows the layer to perform multiple functions without requiring entirely separate structures.

The semiconductor layer serves multiple functions simultaneously: it acts as a diffusion barrier to prevent nickel-silicon reactions, provides electrical isolation between different device regions, enables formation of both ohmic and Schottky contacts, and maintains structural integrity. This multi-functionality reduces the need for separate dedicated structures for each function.