SiC Semiconductor Device Nickel Diffusion Barrier
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Solution Overview
Problem
Semiconductor devices with silicon carbide (SiC) face increased leakage current and reduced reliability due to nickel (Ni) diffusion from the source electrode to the gate electrode, especially when downscaled, leading to higher on-resistance and potential device failure.
Innovation Solution
Incorporating a structure body made of polysilicon or TiN between the source electrode and the gate electrode to absorb or block nickel, preventing its diffusion and thereby reducing leakage current and enhancing device reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the device is downscaled to improve integration density, then productivity increases, but nickel diffusion from source electrode to gate electrode increases causing higher leakage current and reduced reliability
Solution Approach 1:
A barrier electrode is introduced as an intermediary component between the source electrode and the gate electrode. This barrier electrode acts as a mediator that blocks nickel diffusion from the source electrode to the gate electrode, preventing the harmful interaction that causes leakage current while allowing the device to maintain its downscaled dimensions for high integration density.
Solution Approach 2:
The electrode structure is segmented into multiple components: source electrode, barrier electrode, and gate electrode. This segmentation separates the functions of electrical connection (source electrode) and gate control (gate electrode) while inserting a protective barrier electrode in between to prevent nickel diffusion, thus maintaining both device performance and reliability at scaled dimensions.
2Productivity
If the device is downscaled to improve integration density, then productivity increases, but on-resistance increases reducing device performance
Solution Approach 1:
The barrier electrode serves as a mediator that prevents nickel diffusion while maintaining electrical connectivity. By blocking nickel from reaching the gate electrode, it prevents the formation of nickel silicide that would increase on-resistance, thus maintaining low on-resistance even as the device is downscaled for higher integration density.
Solution Approach 2:
The barrier electrode is positioned locally between the source electrode and gate electrode where nickel diffusion occurs. This localized intervention prevents nickel diffusion specifically at the critical interface without affecting other regions of the device, maintaining optimal electrical properties and low on-resistance in the channel region while enabling device downsaling.
3Reliability
If polysilicon or TiN structure body is added to block nickel diffusion, then reliability improves, but device complexity increases
Solution Approach 1:
A barrier electrode is introduced as an intermediary component between the source electrode and the gate electrode. This barrier electrode acts as a mediator that blocks nickel diffusion from the source electrode to the gate electrode, preventing the harmful interaction that causes leakage current while allowing the device to maintain its downscaled dimensions for high integration density.
Solution Approach 2:
The barrier electrode is configured with specific material properties (using polysilicon or TiN) and dimensional parameters (thickness and area) that are optimized to block nickel diffusion effectively. By controlling these parameters, the structure achieves reliable nickel diffusion prevention with minimal addition to device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of polysilicon or TiN structure bodies effectively suppresses nickel diffusion, reducing leakage current and improving the reliability and performance of SiC semiconductor devices by maintaining low on-resistance even at smaller scales.
Implementation Method 1
Incorporating a structure body made of polysilicon or TiN between the source electrode and the gate electrode to absorb or block nickel, preventing its diffusion
Implementation Method 2
preventing its diffusion and thereby reducing leakage current
Data Source
AI summary
According to one embodiment, a semiconductor device includes a semiconductor portion, a gate electrode, a source electrode, a first structure body, and a first insulating portion. The semiconductor portion includes SiC and includes first to third semiconductor regions. The first semiconductor region includes first to third partial regions. The second partial region is provided between the third partial region and the first partial region. The third semiconductor region is provided between the second partial region and the second semiconductor region. The source electrode is electrically connected to the second semiconductor region. The first insulating portion includes a first insulating region and a second insulating region. The first insulating region is provided between the first partial region and the gate electrode. The second insulating region is provided between the second semiconductor region and the first structure body. The first structure body includes at least one of polysilicon or TiN.