SiC Package-in-Package Assembly With Common Gate and Silver Sintering
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current power management technologies face challenges with high cost, inferior thermal performance, higher inductance, larger size, and lower integration levels due to the use of leadframe packages and copper clips, which are not suitable for high-performance, high-voltage, and high-frequency applications.
Innovation Solution
A package-in-package configuration using silicon carbide semiconductor die with a common gate conductor and sintered interfaces, where multiple silicon carbide die are coupled to a leadframe and substrate, enabling simultaneous switching and improved thermal performance through a silver sintering process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If leadframe packages and copper clips are used for integration, then device assembly is simplified, but thermal performance deteriorates and inductance increases
Solution Approach 1:
The patent changes the material parameter from traditional copper clips to silver sintered bonds, which fundamentally alters the thermal and electrical characteristics. Silver sintering provides superior thermal conductivity and lower inductance compared to copper clips, while still maintaining ease of assembly through a standardized bonding process.
Solution Approach 2:
The invention uses silver sintered joints that combine the advantages of both mechanical bonding and metallurgical bonding. The sintered silver creates a composite structure that integrates the leadframe, substrates, and semiconductor devices with optimized thermal and electrical pathways, resolving the contradiction between assembly simplicity and thermal performance.
2Ease of manufacture
If discrete manufacturing is used for high-performance power devices, then manufacturing cost is reduced, but integration level and efficiency deteriorate
Solution Approach 1:
The patent segments the power device into multiple semiconductor dies that can be manufactured using simple discrete processes, then integrates them through a modular package structure. This allows each die to be produced cost-effectively as a discrete component while achieving high integration levels when assembled in the package with multiple dies and substrates.
Solution Approach 2:
The invention implements a package-in-package structure where inner packages containing semiconductor dies are nested within an outer package. This nested architecture enables high integration levels by combining multiple discrete devices in a compact arrangement, while each individual die can still be manufactured using cost-effective discrete processes.
3Productivity
If more mask layers are used in IC processes for integration, then integration level increases, but manufacturing cost increases
Solution Approach 1:
The patent divides the integrated circuit function into separate semiconductor dies that require fewer mask layers during fabrication. Each die can be manufactured with simplified processes, and the integration is achieved through the package architecture rather than through complex multi-layer IC fabrication, thereby reducing manufacturing cost while maintaining high integration level.
4Volume of moving object
If traditional packaging is used, then device size is reduced, but inductance and thermal performance worsen
Solution Approach 1:
The patent changes the electrical parameter of the interconnect structure by using silver sintered bonds instead of traditional copper clips or wire bonds. This parameter change reduces the loop area and inductance of the electrical pathways, achieving low inductance in a compact package size. The silver sintering process creates direct metallurgical bonds that minimize parasitic inductance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces costs, enhances thermal performance, and increases integration levels, allowing for robust operation at high frequencies and voltages while maintaining reliability and yield.
Implementation Method 1
a silver sintering process
Data Source
AI summary
In a general aspect, an apparatus can include an inner package including a first silicon carbide die having a die gate conductor coupled to a common gate conductor, and a second silicon carbide die having a die gate conductor coupled to the common gate conductor. The apparatus can include an outer package including a substrate coupled to the common gate conductor, and a clip coupled to the inner package and coupled to the substrate.