Multi-Phase SiC Package Structure for Dual-Sided Heat Dissipation
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Solution Overview
Problem
The assembly of multiple discrete half-bridge silicon carbide (SiC) switches into a single power module is complex, time-consuming, and prone to errors, increasing assembly costs and requiring improvements in heat dissipation and power loss reduction.
Innovation Solution
A multi-phase silicon carbide (SiC) module packaging structure that packages at least two half-bridge modules within a single package body, utilizing a heat dissipation substrate, lead frame, and clips to connect transistors in parallel, with dual-sided heat dissipation through exposed metal surfaces, reducing assembly costs and improving thermal performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple discrete half-bridge switches are assembled into a single power module, then the module can achieve high temperature resistance and high voltage tolerance, but the assembly process becomes complex and time-consuming
Solution Approach 1:
The patent merges multiple discrete half-bridge modules into a single integrated package body. Multiple half-bridge modules are packaged together with shared components including a common heat dissipation substrate, common lead frame, and common encapsulation, reducing assembly complexity while maintaining the reliability benefits of silicon carbide devices
2Power
If multiple discrete half-bridge switches are assembled into a single power module, then power conversion capability is achieved, but assembly time increases
Solution Approach 1:
The patent employs preliminary action by pre-assembling multiple half-bridge modules on a common heat dissipation substrate with integrated lead frames before final encapsulation. The metal routing patterns are pre-formed on the substrate, and multiple modules are mounted simultaneously, significantly reducing assembly time compared to discrete assembly
3Adaptability or versatility
If multiple discrete half-bridge switches are assembled into a single power module, then functionality is achieved, but assembly errors increase
Solution Approach 1:
The patent segments the power module into standardized half-bridge module units that can be independently designed and tested before integration. Each half-bridge module maintains its own internal connectivity while sharing common infrastructure, allowing for modular assembly that reduces errors compared to fully discrete assembly
4Ease of manufacture
If conventional packaging is used for multi-phase SiC modules, then assembly is simpler, but heat dissipation performance is poor
Solution Approach 1:
The patent transitions from single-sided to dual-sided heat dissipation by exposing heat dissipation surfaces on both the top and bottom of the package body. The heat dissipation substrate has metal routing and exposed surfaces on opposite sides, creating a three-dimensional heat dissipation architecture that improves thermal performance without complicating assembly
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The packaging structure enhances conversion efficiency, reduces assembly costs, and improves heat dissipation and power loss by exposing both sides of the heat dissipation substrate and plate from the package body, achieving efficient thermal management.
Implementation Method 1
The heat dissipation substrate is provided with a metal routing... the heat dissipation substrate includes a heat dissipation surface, the heat dissipation surface is exposed from the package bottom surface
Implementation Method 2
The lead frame is coupled to the heat dissipation substrate and includes a power pin and a ground pin... The source of the high-side SiC transistor is coupled to the drain of the low-side SiC transistor through the first clip and the metal routing
Data Source
AI summary
A packaging structure includes heat dissipation substrate, a lead frame, multiple half-bridge modules, and a package body. The heat dissipation substrate has a metal routing. The lead frame is coupled to the heat dissipation substrate and includes a power pin and a ground pin. Half-bridge modules connect in parallel between the power pin and the ground pin. Each half-bridge module includes a high-side SiC transistor, a low-side SiC transistor and a first clip. The high-side SiC transistor and the low-side and the SiC transistor are flip-chip mounted on the corresponding position of the metal routing of the heat dissipation substrate. The source electrode of the high-side SiC transistor is coupled to the drain electrode of the low-side SiC transistor through the first connecting piece and the metal routing. The package covers the heat dissipation substrate, multiple sets of half-bridge modules and part of the lead frame.