Silicon Carbide Semiconductor Package Pressurized Inert Gas
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Solution Overview
Problem
High voltage semiconductor devices, particularly those above 500 volts, are prone to arcing due to low pressure atmospheres in hermetically sealed packages, which can lead to reliability issues and limited operational voltage, especially in military and space applications where hermetic polymer coatings have temperature limitations and thermal expansion problems.
Innovation Solution
A hermetically sealed integrated circuit package with a cavity that is pressurized during assembly, using inert gases at pressures up to 50 PSIG, and employing brazed elements compatible with Silicon Carbide dies, allowing for higher temperature processing and preventing arcing by maintaining high pressure within the package, thus enabling operation up to at least 1200 volts without arcing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If hermetically sealed packages are used to prevent moisture contact, then reliability is improved, but arcing occurs due to low pressure atmosphere inside the package
Solution Approach 1:
The patent changes the pressure parameter inside the hermetically sealed package from atmospheric pressure to pressurized conditions (using inert gas at elevated pressure). This parameter change prevents arcing while maintaining the hermetic seal's moisture protection function, thereby resolving the contradiction between reliability improvement and arcing prevention.
Solution Approach 2:
The patent introduces an inert gas atmosphere at pressurized conditions inside the package. The inert atmosphere eliminates oxygen and other reactive gases that could contribute to arcing, while the pressurized state further suppresses electrical breakdown. This creates an environment that simultaneously protects against moisture (hermetic seal) and prevents arcing (inert pressurized atmosphere).
2Object-affected harmful factors
If polymer dielectric coatings are added to prevent arcing, then arcing resistance is improved, but temperature limitations and thermal expansion problems occur
Solution Approach 1:
Instead of using polymer coatings that have temperature limitations, the patent changes the environmental parameters inside the package by introducing a pressurized inert gas atmosphere. This approach provides arcing resistance without the thermal constraints of polymer materials, allowing the device to operate at higher temperatures.
Solution Approach 2:
The patent uses the pressurized inert gas atmosphere as an intermediary medium between the dielectric surfaces. This gas medium prevents arcing through its electrical properties and pressure effects, replacing the need for polymer dielectric coatings that would otherwise serve as the protective intermediary but fail at high temperatures.
3Device complexity
If single die packages are used to reduce complexity, then device complexity is reduced, but arcing occurs at voltages above 500 volts
Solution Approach 1:
The patent changes the pressure and atmospheric composition parameters inside the single die package. By pressurizing the inert gas atmosphere, the electrical breakdown voltage is significantly increased, allowing single die packages to operate safely at voltages above 500 volts without arcing, thus maintaining simplicity while enabling high voltage operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly reduces the likelihood of arcing in high voltage semiconductor devices, enabling single die packages to operate safely at higher voltages, improving reliability and extending the operational range beyond conventional limits while maintaining hermeticity and mechanical strength.
Implementation Method 1
providing a large pressure in the completed package, the dies are significantly less likely to arc
Implementation Method 2
Electrical arcing internally to the micro-electronic package, either across the die itself or from package electrode-to-electrode, is always a concern
Implementation Method 3
hermetically sealed package to prevent moisture from contacting the die
Implementation Method 4
employ brazed elements compatible with Silicon Carbide dies which can be processed at higher temperatures
Data Source
AI summary
A hermetically sealed integrated circuit package that includes a cavity housing a semiconductor die, whereby the cavity is pressurized during assembly and when formed. The invention prevents the stress on a package created when the package is subject to high temperatures at atmospheric pressure and then cooled from reducing the performance of the die at high voltages. By packaging a die at a high pressure, such as up to 50 PSIG, in an atmosphere with an inert gas, and providing a large pressure in the completed package, the dies are significantly less likely to arc at higher voltages, allowing the realization of single die packages operable up to at least 1200 volts. Moreover, the present invention is configured to employ brazed elements compatible with Silicon Carbide dies which can be processed at higher temperatures.