Amorphous Silicon Carbide Passivation for Structured Metal Layers
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Solution Overview
Problem
Semiconductor devices with structured metal layers face challenges in passivation, leading to reduced lifetime due to corrosion from subsequent production steps and operation, especially when using cost-effective base metals like aluminum, which are prone to damage during etching processes.
Innovation Solution
A semiconductor device with a structured metal layer thicker than 100 nm, where a covering layer of amorphous silicon carbide is deposited using plasma deposition with helium as a dilution gas, adjacent to the front side and side wall of the metal layer, preventing seam lines and corrosion, thereby enhancing passivation and extending the device's lifetime.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a structured metal layer is used in semiconductor devices, then cost-effectiveness is improved, but corrosion resistance deteriorates
Solution Approach 1:
The patent applies composite materials by combining a structured metal layer (aluminum or copper) with a dielectric covering layer. This composite structure allows the use of cost-effective base metals while the dielectric layer provides corrosion protection, resolving the contradiction between cost-effectiveness and corrosion resistance.
Solution Approach 2:
The dielectric covering layer acts as an intermediary between the structured metal layer and the external environment. This intermediate layer protects the metal layer from corrosion during subsequent production steps and operation, enabling the use of cost-effective metals without sacrificing reliability.
2Reliability
If the structured metal layer is made thicker, then corrosion protection is improved, but manufacturing complexity increases
Solution Approach 1:
Instead of increasing metal layer thickness, the patent uses a composite structure where a thin structured metal layer is combined with a dielectric covering layer. This approach provides adequate corrosion protection without the manufacturing complexity of thicker metal layers.
Solution Approach 2:
The patent changes the material parameter from pure metal to a composite metal-dielectric structure. This parameter change allows achieving corrosion protection at thinner metal thickness levels, reducing manufacturing complexity while maintaining reliability.
3Device complexity
If conventional passivation methods are used, then production steps are simplified, but corrosion resistance deteriorates
Solution Approach 1:
The patent uses a dielectric covering layer as part of a composite structure that provides both passivation and corrosion protection. This approach maintains relatively simple production steps while achieving superior corrosion resistance compared to conventional passivation methods.
Solution Approach 2:
The dielectric covering layer serves as an intermediary that provides both passivation during production and long-term corrosion protection during operation. This single layer performs multiple functions, maintaining production simplicity while enhancing reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of amorphous silicon carbide as a covering layer improves the passivation of structured metal layers, reducing corrosion and enabling the use of cost-effective base metals, resulting in increased semiconductor device lifetime and cost-effectiveness.
Implementation Method 1
The covering layer is formed by plasma deposition
Implementation Method 2
Helium is used as dilution gas during the plasma deposition
Data Source
AI summary
A semiconductor device comprises a structured metal layer. The structured metal layer lies above a semiconductor substrate. In addition, a thickness of the structured metal layer is more than 100 nm. Furthermore, the semiconductor device comprises a covering layer. The covering layer lies adjacent to at least one part of a front side of the structured metal layer and adjacent to a side wall of the structured metal layer. In addition, the covering layer comprises amorphous silicon carbide.