SiC Pellicle Manufacturing via Substrate Removal
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Solution Overview
Problem
The manufacturing process for pellicles with SiC thin films is complex and costly due to the need for etching a Si substrate, requiring multiple steps including photoresist formation, patterning, and hard mask etching, which increases the complexity and cost of production.
Innovation Solution
A method involving forming a SiC film on a substrate, bonding a supporting member with a through hole to the SiC film, and completely removing the substrate using wet etching with a mixed acid like hydrofluoric and nitric acid, simplifying the process by eliminating the need for substrate etching steps.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If a SiC thin film is formed on a Si substrate and a part of the Si substrate is etched to create a supporting member, then the mechanical strength of the pellicle is improved, but the manufacturing process becomes complex and costly
Solution Approach 1:
The supporting member with through holes is formed on the Si substrate before the SiC thin film is deposited. This preliminary formation of the supporting structure eliminates the need for subsequent complex etching processes to create the supporting member, while still providing the necessary mechanical strength to the final pellicle structure
Solution Approach 2:
The supporting member is designed with through holes that segment the structure, allowing the SiC thin film to be supported only in specific regions. This segmentation approach provides mechanical strength where needed while maintaining the simplicity of the manufacturing process by avoiding complex etching patterns
2Stability of the object's composition
If multiple etching steps including photoresist formation and hard mask etching are performed to remove part of the Si substrate, then the pellicle structure is improved, but the manufacturing cost increases
Solution Approach 1:
The supporting member structure is formed in advance on the Si substrate before SiC film deposition. This preliminary structuring eliminates the need for multiple subsequent etching steps, photoresist formations, and hard mask processes, thereby reducing manufacturing cost while maintaining the required pellicle structure
Solution Approach 2:
The complex etching process steps including photoresist formation, patterning, and hard mask etching are extracted and eliminated from the manufacturing process. The supporting member is instead formed as a separate component that is bonded to the substrate, removing the need for these costly intermediate steps
3Manufacturing precision
If the substrate is completely removed by wet etching after bonding the supporting member, then the pellicle quality is improved, but the risk of damaging the SiC film during etching increases
Solution Approach 1:
The supporting member is bonded to the Si substrate before the SiC thin film is deposited. This preliminary bonding creates a protective configuration where the SiC film is formed on top of the supporting member, and the substrate can be safely removed by wet etching without exposing the SiC film to etching damage
Solution Approach 2:
The supporting member acts as a protective cushion or barrier during the substrate removal process. By being in place before substrate etching, it prevents the etchant from contacting and damaging the SiC film, while still allowing complete substrate removal to achieve high pellicle quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method simplifies the manufacturing process, reduces costs, and ensures the mechanical strength of the SiC film while maintaining high transmittance and resistance, allowing for the production of high-quality pellicles with reduced risk of damage to the SiC film during wet etching.
Implementation Method 1
The step for removing the substrate includes a step of completely removing the substrate by relatively moving the substrate, the SiC film and the supporting member, relative to liquid chemical capable of wet etching the substrate
Data Source
Figure 1
Figure 2(a)~2(d)
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AI summary
A method for manufacturing of a pellicle that can simplify the manufacturing process is provided. The method for manufacturing of a pellicle comprises a step for forming a SiC film on a bottom surface of a Si substrate, a step for bonding a supporting member including a through hole to a bottom surface of the SiC film, and a step for removing the Si substrate, after bonding the supporting member.