SiC Photodetector Full-Spectrum Response via Plasmon Nanostructure

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Solution Overview

Problem

Silicon carbide-based photodetectors are limited to responding only to ultraviolet light due to their bandgap constraints, which restricts their application, especially in high-temperature environments where traditional silicon photodetectors fail due to poor thermal resistance.

Innovation Solution

A silicon carbide-based full-spectrum-responsive photodetector is developed, featuring a silicon carbide substrate with interdigital metal counter electrodes and a surface plasmon polariton nanostructure composed of metal nanoparticles, enabling Schottky contact and allowing detection of ultraviolet, visible, and near-infrared light through the absorption by silicon carbide and surface plasmon polariton nanostructures respectively.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If a traditional silicon carbide photodetector is used, then ultraviolet detection is achieved, but the spectral response range is limited due to bandgap constraints

Engineering Contradiction:

Improvespectral response rangeVSAvoiddetection accuracy

Core Design Contradiction:

Adaptability or versatilityVSReliability

Solution Approach 1:

The photodetector is segmented into multiple functional regions: a silicon carbide substrate for ultraviolet detection, a core-shell nanostructure layer for visible and near-infrared detection, and metal electrode layers for electrical contact. Each segment is optimized for specific wavelength ranges, enabling full-spectrum detection while maintaining specialized detection accuracy for each band

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The patent employs composite material structures including core-shell nanostructures with different bandgap materials, multi-layer metal electrodes, and heterostructure interfaces. These composite materials enable the detector to respond to multiple spectral ranges simultaneously while maintaining high detection accuracy through material-specific optimization

Inventive Principle:

Principle #40Composite materials

2Temperature

If traditional silicon photodetectors are used in high-temperature environments, then detection function is provided, but thermal resistance is poor leading to device failure

Engineering Contradiction:

Improveoperating temperature rangeVSAvoiddevice stability

Core Design Contradiction:

TemperatureVSReliability

Solution Approach 1:

The patent changes the fundamental material parameter of the photodetector substrate from traditional silicon to silicon carbide, which has inherently higher thermal conductivity and broader temperature operating range. This parameter change enables the device to operate reliably in high-temperature environments while maintaining detection function

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The device uses composite material structures including silicon carbide substrate combined with core-shell nanostructure layers, where each material is selected for its thermal and optical properties. The silicon carbide provides thermal stability while the core-shell structures provide spectral detection capability across different temperature conditions

Inventive Principle:

Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The solution enables simultaneous full-spectrum detection of ultraviolet, visible, and near-infrared light, overcoming the bandgap limitations of traditional silicon carbide photodetectors, while maintaining high stability and thermal resistance, thus enhancing detectivity and responsivity across a broader spectral range.

Implementation Method 1

a surface plasmon polariton nanostructure composed of metal nanoparticles, enabling Schottky contact and allowing detection of ultraviolet, visible, and near-infrared light through the absorption by silicon carbide and surface plasmon polariton nanostructures respectively

Methodology Applied

Scientific EffectSurface plasmon resonance:

Implementation Method 2

The silicon carbide can be used as the light absorption layer of an ultraviolet photodetector

Methodology Applied

Scientific EffectPhotoelectric effect: Photoelectric Effect

Implementation Method 3

the key to achieving a large photo-to-dark current ratio lies in the formation of a Schottky junction contact between the metal and the semiconductor during the manufacturing of the metal electrode

Methodology Applied

Scientific EffectSchottky barrier:

Data Source

PatentUS11710801B2Silicon carbide-based full-spectrum-responsive photodetector and method for producing same

Publication Date: 2023.07.25 TAIYUAN UNIVERSITY OF TECHNOLOGY

AI summary

The present application relates to semiconductor photodetectors, in particular to a silicon carbide-based UV-visible-NIR full-spectrum-responsive photodetector and a method for fabricating the same. The photodetector includes a silicon carbide substrate, and metal counter electrodes and a surface plasmon polariton nanostructure arranged thereon. The silicon carbide substrate and the metal counter electrodes constitute a metal-semiconductor-metal photodetector with coplanar electrodes. When the ultraviolet light is input, free carriers directly generated in silicon carbide are collected by an external circuit to generate electrical signals. When the visible light is input, hot carriers generated in the surface plasmon polariton nanostructure tunnel into the silicon carbide semiconductor to become free carriers to generate electrical signals.