Silicon Carbide Powder Oxygen Removal via Hydrogen Cooling

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Solution Overview

Problem

The manufacturing of silicon carbide powder often results in residual oxygen, which interferes with the sintering process, reducing the density and efficiency of the silicon carbide sintered body.

Innovation Solution

A method involving the mixing of a silicon source with a solid carbon source or organic carbon compound, heating, cooling, and supplying hydrogen gas to reduce residual oxygen in the silicon carbide powder, followed by hot-pressing to form a high-density sintered body.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional manufacturing schemes (Acheson, carbon-thermal reduction, liquid polymer thermal decomposition, or CVD) are used to produce silicon carbide powder, then silicon carbide powder can be manufactured with superior physical strength and chemical resistance, but residual oxygen is produced during reaction which interferes with sintering and reduces density and process efficiency

Engineering Contradiction:
Improvephysical strength and chemical resistance of silicon carbideVSAvoidresidual oxygen interference with sintering
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The patent applies preliminary action by performing oxygen removal through hydrogen gas treatment during the cooling phase, before the sintering process begins. This preliminary removal of residual oxygen prevents interference with subsequent sintering operations, allowing the silicon carbide powder to achieve high density and proper particle contact without oxygen-related defects.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent converts the harmful effect of residual oxygen into a benefit by using hydrogen gas to react with and remove the oxygen during cooling. The residual oxygen that would normally interfere with sintering is transformed through chemical reaction with hydrogen, eliminating the harmful effect and enabling high-quality sintered body production.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

2Ease of manufacture

If conventional manufacturing schemes are used without additional oxygen removal processes, then production cost and process complexity remain low, but residual oxygen reduces density of silicon carbide sintered body and process efficiency

Engineering Contradiction:
Improvemanufacturing process simplicity and costVSAvoiddensity of silicon carbide sintered body
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent merges the oxygen removal function with the existing cooling process by introducing hydrogen gas during cooling. Instead of adding a separate oxygen removal step, the cooling phase serves dual purposes: temperature reduction and oxygen removal through hydrogen reaction, thereby maintaining process simplicity while achieving high density sintered bodies.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent changes the chemical environment parameter during cooling by introducing hydrogen gas. This parameter change transforms the cooling phase from a purely thermal process to a chemical treatment process that removes oxygen, enabling high-density sintering without significantly increasing process complexity or cost.

Inventive Principle:
Principle #35Parameter changes

3Productivity

If residual oxygen is not removed from silicon carbide powder, then additional processing steps and costs are avoided, but particle contact during sintering is interfered with, reducing process efficiency and yield rate

Engineering Contradiction:
Improveprocess efficiency and yield rateVSAvoidresidual oxygen in silicon carbide powder
Core Design Contradiction:
ProductivityVSObject-generated harmful factors

Solution Approach 1:

The patent performs preliminary oxygen removal during the cooling phase before sintering begins. By removing residual oxygen in advance through hydrogen gas treatment, the sintering process proceeds without oxygen interference, ensuring efficient particle contact and high yield rate without requiring additional dedicated oxygen removal steps.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent converts the harmful residual oxygen into a removable substance by introducing hydrogen gas during cooling. The oxygen that would normally reduce process efficiency and yield rate is chemically reacted and removed, transforming a productivity-limiting factor into a controllable parameter that enables efficient sintering.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively reduces residual oxygen in the silicon carbide powder, improving process efficiency and cost by facilitating better particle contact, resulting in a high-quality silicon carbide sintered body with enhanced density and compactness.

Implementation Method 1

supplying hydrogen gas into the mixture... hydrogen gas is supplied into a mixed raw material received in a crucible during a cooling process. Accordingly, an amount of the residual oxygen in the silicon carbide powder can be reduced.

Methodology Applied
Scientific EffectHydrogen reduction: Reduction

Implementation Method 2

heating the mixture... mixing and heating source materials, such as a silicon source and a carbon source

Methodology Applied
Scientific EffectThermal synthesis: Heating

Implementation Method 3

hot-pressing the silicon carbide powder... manufacture of a silicon carbide sintered body

Methodology Applied
Scientific EffectSintering: Sintering

Data Source

PatentUS9840420B2Silicon carbide powder, method for manufacturing the same and silicon carbide sintered body, method for manufacturing the same
Publication Date: 2017.12.12 S TECH CO LTD
  • US9840420B2 patent drawing
  • US9840420B2 patent drawing
  • US9840420B2 patent drawing

AI summary

A method for manufacturing a silicon carbide powder according to the embodiment includes forming a mixture by mixing a silicon (Si) source containing silicon with a solid carbon (C) source or a C source containing an organic carbon compound; heating the mixture; cooling the mixture; and supplying hydrogen gas into the mixture.