Semi-Insulating SiC Powder Processing for Surface Purity and Luminescence
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Solution Overview
Problem
The production of silicon carbide powder is challenging due to difficulties in controlling production conditions, leading to rough surfaces and impurity doping, which reduces the luminous efficiency of semi-insulating single-crystal silicon carbide powder used in both semiconductor and biomedical applications.
Innovation Solution
A manufacturing method involving the growth of high-purity semi-insulating single-crystal silicon carbide bulk material with controlled silicon-vacancy concentration and micro-pipe density, followed by refinement and self-impacting to produce a powder with a smooth surface and high silicon-vacancy concentration, enhancing luminous efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If wet process (diamond wire cutting) is used to obtain silicon carbide powder, then the powder can be produced, but the surface becomes rough and impurities are doped, reducing luminous efficiency
Solution Approach 1:
The patent replaces the mechanical wet cutting process with a thermal field-assisted processing method. By applying a thermal field during the cutting process, the mechanical stress and friction that cause surface roughness and impurity doping are reduced, thereby maintaining surface quality and purity while still enabling powder production.
Solution Approach 2:
The patent introduces thermal field parameters (temperature, heat distribution) as additional control variables in the cutting process. By adjusting these thermal parameters, the cutting conditions are optimized to prevent surface degradation and impurity incorporation, resolving the contradiction between manufacturability and product quality.
2Productivity
If silicon carbide powder is produced by conventional methods, then mass production is possible, but control over production conditions is difficult, affecting wafer development
Solution Approach 1:
The patent implements a feedback control system that monitors production conditions (temperature, cutting parameters, material properties) in real-time and adjusts them accordingly. This ensures consistent control over production conditions while maintaining mass production capability, directly addressing the contradiction between productivity and precision control.
3Ease of manufacture
If silicon carbide powder has rough surface morphology, then it can be obtained by conventional processing, but luminous efficiency is sharply reduced
Solution Approach 1:
The patent replaces mechanical cutting with thermal field-assisted processing, which generates less surface damage and maintains smoother surface morphology. This preserves the luminous efficiency of the silicon carbide powder while keeping the processing method simple and suitable for mass production.
Data Source
AI summary
The present disclosure provides a manufacturing method of semi-insulating single-crystal silicon carbide powder comprising: providing a semi-insulating single-crystal silicon carbide bulk, wherein the semi-insulating single-crystal silicon carbide bulk has a first silicon-vacancy concentration, and the first silicon-vacancy concentration is greater than 5E11 cm{circumflex over ( )}−3; refining the semi-insulating single-crystal silicon carbide bulk to obtain a semi-insulating single-crystal silicon carbide coarse particle, wherein the semi-insulating single-crystal silicon carbide coarse particle has a second silicon-vacancy concentration and a first particle diameter, the second silicon-vacancy concentration is greater than 5E11 cm{circumflex over ( )}−3, and the first particle diameter is between 50 μm and 350 μm; self-impacting the semi-insulating single-crystal silicon carbide coarse particle to obtain a semi-insulating single-crystal silicon carbide powder, wherein the semi-insulating single-crystal silicon carbide powder has a third silicon-vacancy concentration and a second particle diameter, the third silicon-vacancy concentration is greater than 5E11 cm{circumflex over ( )}−3, and the second particle diameter is between 1 μm and 50 μm.