SiC Power Module Ceramic Substrate Copper Plate Thermal Management
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Solution Overview
Problem
Conventional Si power modules face limitations in miniaturization due to high normalized on resistance, warpage issues, and inability to operate at high temperatures, while SiC power modules require thin designs to reduce thermal resistance but struggle with structural warpage and inefficient space utilization.
Innovation Solution
A power module semiconductor device featuring a ceramic substrate with a copper plate layer, semiconductor chip, and pillar connection electrodes, optimized for reduced size and weight, with signal terminals alternately disposed to minimize occupied area and prevent short-circuits, using a resin-sealed transfermold technique.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the chip area is increased to reduce normalized on resistance, then the resistance decreases, but the module area and thickness increase
Solution Approach 1:
The patent changes the material parameter from conventional Si to SiC, which has fundamentally different electrical and thermal properties. SiC devices achieve lower normalized on resistance at smaller chip areas due to higher electron saturation velocity and lower intrinsic carrier concentration, resolving the contradiction between resistance reduction and miniaturization
Solution Approach 2:
The patent employs a composite substrate structure combining ceramic substrate with copper plate layers for thermal management. This composite structure enables efficient heat dissipation from compact SiC devices, allowing reduced chip area without compromising thermal performance or increasing module volume
2Stability of the object's composition
If the substrate thickness is increased to reduce warpage, then warpage decreases, but the module thickness increases
Solution Approach 1:
The patent applies local quality enhancement by using SiC devices with superior thermal and mechanical properties at critical locations. The high thermal conductivity and mechanical strength of SiC components locally compensate for thermal expansion mismatches, reducing overall module warpage without requiring increased substrate thickness
Solution Approach 2:
The patent changes material parameters from Si-based to SiC-based components, which have lower thermal expansion coefficients and higher mechanical strength. These parameter changes reduce warpage tendencies, enabling thinner substrate designs while maintaining dimensional stability
3Volume of stationary object
If the module is designed to be thin for miniaturization, then the size decreases, but thermal resistance is insufficient and warpage occurs
Solution Approach 1:
The patent introduces copper plate layers as intermediary thermal conduction paths between the SiC devices and the ceramic substrate. These copper intermediaries provide low thermal resistance pathways, enabling effective heat extraction from compact devices without requiring increased module volume
Solution Approach 2:
The patent employs a composite thermal management structure with ceramic substrate and copper plate layers. This composite design combines the electrical insulation and mechanical strength of ceramic with the high thermal conductivity of copper, achieving low thermal resistance in a compact form factor
4Power
If conventional Si power modules are used for high power output, then high power can be handled, but heat generation becomes excessive
Solution Approach 1:
The patent fundamentally changes the material parameter from Si to SiC, which has higher thermal conductivity and lower on-resistance. These parameter changes enable higher power density with reduced heat generation, as SiC devices convert more electrical energy to useful work and less to heat losses
5Volume of stationary object
If SiC power modules use thin design for miniaturization, then size is reduced, but space utilization becomes inefficient
Solution Approach 1:
The patent optimizes the three-dimensional arrangement of components within the module. By carefully designing the vertical stacking and lateral positioning of SiC devices, copper plates, and ceramic substrate, the patent achieves high space utilization efficiency in compact modules, effectively using available volume without excessive thickness
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables a compact, lightweight SiC power module with improved power density and reduced manufacturing costs, capable of high-temperature operation and efficient thermal management.
Implementation Method 1
a first pattern of a first copper plate layer disposed on a surface of the ceramic substrate
Implementation Method 2
there is also disclosed a semiconductor device which is resin-sealed by transfermold technique
Data Source
AI summary
There is provided a power module semiconductor device allowing reduction in size and weight of a thin type SiC power module. The power module semiconductor device includes: a ceramic substrate; a first pattern of a first copper plate layer disposed on a surface of the ceramic substrate; a first semiconductor chip disposed on the first pattern; a first pillar connection electrode disposed on the first pattern; and an output terminal connected to the first pillar connection electrode.