3D Integrated SiC Power Module Package Design
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Solution Overview
Problem
Current package technologies for high-voltage silicon carbide power devices are immature, unreliable, and result in high parasitic parameters, limiting the performance of these devices in power transmission and distribution systems.
Innovation Solution
A three-dimensional integrated package device for high-voltage silicon carbide power modules, featuring a source substrate, housing, metal substrate, drain substrate, and driving layers with sintered connections, decoupling capacitors, and a water cooling channel, which reduces parasitic parameters and enhances thermal conductivity and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If crimping process is used for high-voltage silicon carbide power devices, then the devices can be packaged, but the parasitic parameters become large and reliability is poor
Solution Approach 1:
The patent transitions from traditional two-dimensional planar packaging to three-dimensional vertical integration. Multiple substrates (source substrate, drain substrate, intermediate substrates) are stacked vertically with chip submodules positioned between them, creating a layered structure that reduces current path length and parasitic parameters while improving reliability through distributed pressure support.
Solution Approach 2:
The package is divided into multiple functional layers and substrates rather than a single monolithic structure. The source substrate and drain substrate are separated by intermediate substrates and chip submodules, allowing each layer to be optimized independently and distributing mechanical stress across multiple interfaces, thereby reducing parasitic parameters and improving reliability.
2Adaptability or versatility
If separate crimping modules are connected in series to form half-bridge structure, then the power transmission function is achieved, but the parasitic parameters increase
Solution Approach 1:
The patent integrates multiple chip submodules (including half-bridge configurations) onto a single packaged substrate structure. The first and second chip submodules are positioned on different layers within the same package, with their respective source and drain substrates interconnected through the layered structure, eliminating the need for external connections between separate modules and thereby reducing parasitic parameters.
3Reliability
If traditional packaging is used for high-voltage silicon carbide devices, then the devices are protected, but the performance of the high-voltage silicon carbide power devices cannot be fully utilized
Solution Approach 1:
The patent implements localized optimization of different regions within the package. The intermediate substrates provide localized mechanical support and electrical connection paths, while the layered structure provides localized current distribution. This allows different regions to be optimized for their specific functions (protection, conduction, heat dissipation), enabling full utilization of the high-voltage silicon carbide device performance.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution significantly reduces parasitic parameters, improves reliability by distributing pressure uniformly, and ensures effective heat dissipation, making the high-voltage silicon carbide power modules more suitable for harsh environments and existing power systems.
Implementation Method 1
one end of the power source metal block is sintered with a source on the silicon carbide bare chip, and the other end of the power source metal block penetrates through the first driving substrate
Implementation Method 2
a water cooling channel is formed inside the metal substrate, wherein the water cooling channel is connected with a water inlet and a water outlet
Data Source
AI summary
The present invention relates to a three-dimensional integrated package device for a high-voltage silicon carbide power module, comprising a source substrate, first chip submodules, a first driving terminal, a first driving substrate, a ceramic housing, a metal substrate, a water inlet, a water outlet, second chip submodules, a second driving terminal, a second driving substrate and a drain substrate from top to bottom; and each first chip submodule is composed of a driving connection substrate, a power source metal block, a first driving gate metal post, second driving gate metal posts, a silicon carbide bare chip, an insulation structure and the like. A three-dimensional integrated half-bridge structure is adopted to greatly reduce corresponding parasitic parameters.