SiC Power Module Segmentation for Thermal Management
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Solution Overview
Problem
Conventional power modules with silicon carbide switching components face thermal issues and increased losses due to high power density and stray capacitance/inductance, limiting their ability to handle high voltages and currents efficiently while maintaining a small footprint and low cost.
Innovation Solution
A power module design featuring silicon carbide semiconductor die with a compact footprint, optimized thermal and electrical resistance, and specialized terminal connectors that improve heat dissipation and current handling, allowing continuous operation at high voltages and currents with reduced losses.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If silicon carbide switching components are used to increase switching speed and efficiency, then power handling capability is improved, but thermal issues arise due to high power density and concentrated electric fields
Solution Approach 1:
The patent divides a single large silicon carbide switching component into multiple smaller switching components (e.g., multiple MOSFETs or IGBTs) connected in parallel. This segmentation reduces power density and concentrates electric fields in each individual component, thereby mitigating thermal issues while maintaining high power handling capability through the combined operation of all components.
2Power
If multiple silicon carbide switching components are used for each switch position, then power handling capability is improved, but device complexity increases due to additional signal routing and connections
Solution Approach 1:
The patent combines multiple switching components into a single integrated module housing with common connection terminals. The multiple switching components share common power and control connections through the module's internal architecture, reducing the number of external signal routing paths and connections required compared to using individual discrete components.
3Power
If multiple switching components are used to achieve high power handling, then current capability is improved, but losses increase due to stray capacitance and inductance from additional connections
Solution Approach 1:
The patent transitions from planar signal routing to a three-dimensional internal connection architecture within the module. By utilizing vertical stacking and multi-layer substrate routing, the design minimizes the length and complexity of current paths, reducing stray capacitance and inductance while accommodating multiple switching components in a compact arrangement that optimizes electrical performance.
Data Source
AI summary
A power module includes a case, a first terminal, a second terminal, and a number of silicon carbide semiconductor die. The case has a footprint less than 30 cm2. The silicon carbide semiconductor die are inside the case and coupled between the first terminal and the second terminal. The power module and the silicon carbide semiconductor die are configured such that in a first operating state the silicon carbide semiconductor die are capable of continuously blocking voltages greater than 650V between the first terminal and the second terminal, and in a second operating state the silicon carbide semiconductor die are capable of continuously passing currents greater than 200 A between the first terminal and the second terminal.