SiC Electrode Contact Structure Using Raised Portions to Cut Resistance
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Solution Overview
Problem
Existing semiconductor devices using SiC substrates face challenges in improving electrical characteristics, particularly in terms of connection area and resistance values.
Innovation Solution
The semiconductor device incorporates an SiC semiconductor layer with a raised portion group on its second main surface, which increases the connection area for the electrode, thereby enhancing electrical characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If a planar electrode structure is used on the SiC substrate, then the device structure is simple, but the connection area is limited and electrical characteristics are poor
Solution Approach 1:
The patent transforms the planar electrode structure into a three-dimensional raised portion group structure. By creating multiple raised portions that extend vertically from the substrate surface, the connection area is significantly increased without proportionally increasing the horizontal footprint. This dimensional transition from 2D to 3D allows the electrode to achieve larger effective contact area while maintaining compact device geometry.
Solution Approach 2:
The electrode is divided into multiple discrete raised portions instead of a single continuous planar structure. These segmented raised portions are distributed across the substrate surface, each providing localized contact areas. The segmentation allows for increased total connection area while enabling better current distribution and reducing stress concentration points.
2Reliability
If the electrode connection area is increased, then electrical characteristics improve, but the manufacturing process becomes more complex
Solution Approach 1:
The raised portions are formed on the substrate before the electrode material is deposited. This preliminary structuring of the substrate surface allows the electrode to conformally follow the raised portion geometry, ensuring optimal contact areas are established before subsequent processing steps. The preliminary formation of the three-dimensional structure simplifies later electrode deposition compared to attempting to create complex electrode patterns after substrate processing.
Data Source
AI summary
A semiconductor device includes an SiC semiconductor layer which has a first main surface on one side and a second main surface on the other side, a semiconductor element which is formed in the first main surface, a raised portion group which includes a plurality of raised portions formed at intervals from each other at the second main surface and has a first portion in which some of the raised portions among the plurality of raised portions overlap each other in a first direction view as viewed in a first direction which is one of the plane directions of the second main surface, and an electrode which is formed on the second main surface and connected to the raised portion group.