SiC RF Connector Receptacle for High Power Signal Handling
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Solution Overview
Problem
Existing RF electrical connector receptacles face challenges in handling high power RF signals, particularly due to radiation issues with ceramic dielectrics and the need for hermetic seals, which are often achieved through soldering and can be cumbersome.
Innovation Solution
A radio frequency energy connector receptacle design featuring a Silicon Carbide (SiC) substrate with electrically conductive layers and vias, a solderable pin, and a hollow conductive shell, providing a hermetic seal and high dielectric breakdown voltage for high power connections, while minimizing radiation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If ceramic dielectric microstrip connector receptacles are soldered into the package to provide hermetic bond, then hermetic seal is achieved, but radio frequency energy radiation occurs creating unwanted feedback issues
Solution Approach 1:
The patent uses a composite structure combining a metallic substrate (providing hermetic seal through soldering) with a polymer dielectric material (minimizing RF radiation). This composite approach allows the receptacle to achieve both hermetic sealing and reduced electromagnetic radiation by leveraging the complementary properties of different materials.
2Reliability
If glass dielectric/pin assembly is soldered into the package to provide hermetic seal, then hermetic bond is achieved, but the assembly process becomes complex requiring separate mounting of outer shell
Solution Approach 1:
The patent integrates the dielectric material, pin, and shell into a unified assembly where the polymer dielectric is molded directly around the pin and shell components. This merging of previously separate parts (glass dielectric, pin, and shell) into a single integrated structure simplifies the assembly process while maintaining hermetic sealing capability.
3Power
If high power RF signals are handled using traditional connector receptacles, then signal transmission is achieved, but radiation issues and feedback problems occur
Solution Approach 1:
The patent changes the dielectric parameter from traditional ceramic or glass materials to a polymer dielectric material with different electromagnetic properties. This parameter change in the dielectric material reduces RF energy radiation and feedback while maintaining the ability to handle high power RF signals, as the polymer material has lower dielectric loss and reduced electromagnetic radiation characteristics.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design effectively handles high power RF signals with reduced radiation and provides a reliable hermetic seal, enhancing the performance and efficiency of RF connector receptacles.
Implementation Method 1
The SiC substrate, pin and outer shell can be assembled as a subassembly and then soldered to the package. The combination of SiC and solder gives a hermetic seal to the package. In addition, the SiC has an extraordinarily high dielectric breakdown voltage for high power connections.
Implementation Method 2
A plurality of electrically conductive vias pass through the substrate between the upper electrically conductive layer and the lower electrically conductive layer, the electrically conductive vias being disposed about the aperture in the upper electrically conductive layer and the aperture in the lower electrically conductive layer. The electrically conductive vias electrically interconnect the upper electrically conductive layer and the lower electrically conductive layer.
Implementation Method 3
The connector receptacle can be completed as a stepped process where the Silicon Carbide substrate can be mounted to the shell, the pin then dropped into place and soldered, and then the outer hosing can be soldered onto the SiC substrate. The combination of SiC and solder gives a hermetic seal to the package.
Data Source
AI summary
A high power RF connector receptacle having a solderable pin, an outer connector receptacle shell and a high breakdown voltage dielectric such as Silicon Carbide. The connector receptacle can be completed as a stepped process where the Silicon Carbide substrate can be mounted to the package, the pin can be dropped into place and soldered, and then the outer shell can be soldered onto the SiC substrate. Alternatively, the SiC, pin and outer shell can be assembled as a subassembly and then soldered to the package. The combination of SiC and solder gives a hermetic seal to the package. In addition, the SiC has an extraordinarily high dielectric breakdown voltage for high power connections.