SiC Schottky Junction Structure for Low Forward Voltage Stability
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Solution Overview
Problem
Existing semiconductor devices face challenges in reducing forward voltage while maintaining a comparable level of reverse leakage current and minimizing variations in this current.
Innovation Solution
A semiconductor device with a Schottky metal layer of molybdenum contacting an SiC semiconductor layer, featuring a flat junction structure or unevenness of 5 nm or less, and a thickness of 10 nm to 150 nm, along with a guard ring and field insulating film configuration, to alleviate stress and stabilize reverse leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If the Schottky metal thickness is increased to reduce forward voltage, then the forward voltage decreases, but the reverse leakage current increases
Solution Approach 1:
The patent optimizes the Schottky metal thickness to a specific range (10 nm to 150 nm) to achieve the best balance between forward voltage and reverse leakage current. This parameter optimization resolves the contradiction by finding the optimal thickness value that simultaneously reduces forward voltage while keeping reverse leakage current at acceptable levels.
2Use of energy by moving object
If the junction structure is made flat to reduce forward voltage, then the forward voltage decreases, but the manufacturing precision requirements increase
Solution Approach 1:
The patent specifies that the junction portion should have a flat structure or unevenness of 5 nm or less. This quantitative parameter specification provides clear manufacturing targets while achieving the goal of reducing forward voltage through junction flatness.
3Stability of the object's composition
If the Schottky metal thickness is reduced to decrease stress on the SiC layer, then the stress variation decreases, but the forward voltage increases
Solution Approach 1:
The patent determines the optimal Schottky metal thickness range (10 nm to 150 nm) that simultaneously addresses both concerns: it is thin enough to reduce stress variation on the SiC semiconductor layer while being thick enough to maintain low forward voltage characteristics.
4Reliability
If the junction unevenness is reduced to stabilize reverse leakage current, then the reverse leakage current variation decreases, but the manufacturing complexity increases
Solution Approach 1:
The patent specifies a quantitative parameter (unevenness of 5 nm or less) for the junction portion, which provides a clear manufacturing target for achieving stable reverse leakage current while avoiding overly complex manufacturing processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution reduces forward voltage and stabilizes reverse leakage current, ensuring consistent quality and preventing thermal destruction by reducing heat generation, particularly under inductive loads.
Implementation Method 1
a Schottky metal being made of molybdenum contacting a surface of the SiC semiconductor layer and having a thickness of 10 nm to 150 nm, in which the SiC semiconductor layer has a first junction portion contacting the Schottky metal
Data Source
AI summary
A semiconductor device according to the present invention includes a first conductive-type Sic semiconductor layer, and a Schottky metal, comprising molybdenum and having a thickness of 10 nm to 150 nm, that contacts the surface of the SiC semiconductor layer. The junction of the SiC semiconductor layer to the Schottky metal has a planar structure, or a structure with recesses and protrusions of equal to or less than 5 nm.