SiC Schottky Barrier Structure With Silicon Nitride Interlayer
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Silicon carbide (SiC) Schottky barrier diodes (SBDs) face challenges in reducing forward voltage (VF) to achieve low-loss performance, as existing designs lack effective methods to minimize the Schottky barrier and optimize the structure for efficient operation.
Innovation Solution
Incorporating a silicon nitride intermediate layer between the titanium nitride layer and the silicon carbide layer, which makes the titanium nitride layer polycrystalline with oblique crystal axes, reducing the Schottky barrier and optimizing the thickness of both layers to stabilize forward voltage and minimize reverse leakage current.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If a titanium nitride layer is used as the Schottky barrier layer, then the forward voltage can be reduced, but the manufacturing yield and stability of forward voltage are insufficient
Solution Approach 1:
An intermediate layer containing silicon nitride is introduced between the titanium nitride Schottky barrier layer and the silicon carbide substrate. This intermediate layer acts as a mediator that improves the interface quality and reduces defects, thereby stabilizing the forward voltage and improving manufacturing yield while maintaining the low forward voltage特性 of the titanium nitride layer
Solution Approach 2:
The Schottky barrier structure is designed as a composite system combining titanium nitride and silicon nitride in specific layers. This composite structure leverages the low forward voltage特性 of titanium nitride and the interface-stabilizing properties of silicon nitride to achieve both low forward voltage and high reliability
2Use of energy by moving object
If the titanium nitride layer is made single crystal, then the forward voltage is reduced, but the manufacturing complexity and cost increase
Solution Approach 1:
The invention changes the crystal structure parameter of the titanium nitride layer from single crystal to polycrystalline with controlled grain orientation. Specifically, the titanium nitride layer is designed to have a (111) preferred orientation with grain size controlled at 10-100 nm, which maintains good electrical特性 while significantly reducing manufacturing complexity and cost compared to single crystal growth
3Use of energy by moving object
If the Schottky barrier layer thickness is reduced to lower forward voltage, then the forward voltage decreases, but the reverse leakage current increases
Solution Approach 1:
The intermediate layer containing silicon nitride serves as a mediator that passivates interface states and defects at the Schottky barrier/substrate interface. This passivation effect reduces reverse leakage current pathways, allowing the Schottky barrier layer thickness to be reduced for lower forward voltage without suffering from excessive reverse leakage
Solution Approach 2:
The intermediate layer is strategically positioned only at the critical interface region between the Schottky barrier layer and substrate, providing localized quality improvement where it is most needed for reducing reverse leakage, while maintaining the overall thin-film structure for low forward voltage
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach results in a reduced forward voltage, improved manufacturing yield, and lower manufacturing costs by stabilizing the forward voltage and reducing reverse leakage current, thereby enabling a low-loss SBD.
Implementation Method 1
the titanium nitride layer and the silicon carbide layer, which reduces the Schottky barrier
Data Source
AI summary
A semiconductor device according to an embodiment includes a first electrode, a second electrode, a silicon carbide layer provided between the first electrode and the second electrode and including a first silicon carbide region of n type, a titanium nitride layer provided between the first electrode and the first silicon carbide region, and an intermediate layer provided between the titanium nitride layer and the first silicon carbide region and containing silicon nitride.