Tiled SiC-Seeded AlN Substrates for Large-Diameter Epitaxy
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Solution Overview
Problem
Current methods lack the availability of large-diameter monocrystalline substrates with desired quality characteristics, such as low defect density and specific electrical or optical properties, for materials like aluminum nitride (AlN).
Innovation Solution
A process involving the transfer of a monocrystalline seed layer, typically SiC-6H, to a silicon carrier substrate followed by epitaxial growth of the AlN material, utilizing techniques like molecular adhesion, thinning, and laser debonding to achieve a high-quality monocrystalline AlN layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If monocrystalline substrates of AlN material are produced using conventional methods, then the substrates can be obtained, but they are limited in diameter and quality characteristics such as defect density and electrical or optical properties
Solution Approach 1:
The invention segments the substrate production process into distinct stages: growing high-quality monocrystalline AlN layers on small-diameter seeds, transferring these layers to large-diameter carrier substrates, and then continuing growth. This allows the quality to be determined during the initial growth phase on small seeds while the final substrate can be large in diameter.
Solution Approach 2:
The invention performs preliminary action by first growing high-quality monocrystalline AlN layers on small-diameter seed substrates before transferring them to large-diameter carrier substrates. This preliminary growth phase ensures the desired quality characteristics are established before scaling up to large diameters.
2Area of stationary object
If monocrystalline seed layers are transferred to large-diameter carrier substrates, then large-diameter monocrystalline AlN layers can be produced, but complex transfer processes are required
Solution Approach 1:
The invention uses an intermediary approach by introducing carrier substrates as intermediate carriers. The monocrystalline seed layers are first grown on small seeds, then transferred to large-diameter carrier substrates which serve as intermediaries to achieve large final dimensions without requiring direct growth on large substrates.
Solution Approach 2:
The transfer process is segmented into manageable steps: joining the seed layer to the carrier substrate, thinning the seed layer, and detaching at a weakened zone. This segmentation makes the overall transfer process more controllable and less complex than attempting a single-step transfer.
3Manufacturing precision
If monocrystalline seed layers are thinned to less than 10 μm, then the transferred layers have reduced defects and improved quality, but additional thinning steps are required
Solution Approach 1:
The thinning operation is performed as a preliminary step after transfer and before final detachment. By thinning the seed layer to less than 10 μm (preferably less than 2 μm, more preferably less than 0.2 μm) before detachment, the process ensures reduced defects in the final transferred layer while maintaining control over the thinning process.
Solution Approach 2:
The invention applies local quality by creating a weakened zone at a specific location in the seed layer through ion implantation. This localized modification allows selective thinning and detachment at the weakened zone while maintaining the integrity and quality of the rest of the transferred layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the production of high-quality monocrystalline AlN layers with reduced defects, compatible with large-scale equipment and microelectronics industry standards, and allows for the growth of AlxInyGazAslPmNn materials with lattice parameters close to AlN, expanding application possibilities.
Implementation Method 1
the joining step is a molecular adhesion step
Implementation Method 2
the formation of the weakened zone is obtained by implanting atomic and/or ionic species
Implementation Method 3
the detaching comprises the application of thermal and/or mechanical stress
Implementation Method 4
the detaching comprises the application of thermal and/or mechanical stress
Implementation Method 5
the carrier substrate comprises a detachable interface configured to be detached by means of a laser debonding technique
Implementation Method 6
followed by epitaxial growth of the monocrystalline layer of AlN material
Data Source
AI summary
A structure comprises a carrier substrate, a plurality of tiles on the carrier substrate, and a plurality of monocrystalline layers of AlN material on the plurality of tiles. Each tile of the plurality of tiles comprises a monocrystalline seed layer of SiC-6H material. Each monocrystalline layer of AlN material of the plurality of monocrystalline layers of AlN material is disposed on a respective tile of the plurality of tiles. Also disclosed is substrate for epitaxial growth of monocrystalline layers of AlN material. The substrate comprises a carrier substrate and a plurality of tiles. Each tile of the plurality of tiles comprises a monocrystalline seed layer of SiC-6H material.