SiC Power Semiconductor Layout for Better Heat Dissipation
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Solution Overview
Problem
Existing power semiconductor devices face challenges in achieving high heat dissipation characteristics, particularly in high-voltage and high-current environments, which are essential for applications like power conversion and inverters.
Innovation Solution
The design incorporates a power semiconductor device with a substrate comprising SiC, featuring a first and second region with a well region of a different conductivity type, a source region, a gate electrode, and a passivation layer that defines a recessed portion between the regions, enhancing heat dissipation by integrating a transistor and a Schottky barrier diode on a shared substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If a power semiconductor device operates in high-voltage and high-current environments, then it achieves high-power switching capability, but heat dissipation becomes insufficient
Solution Approach 1:
The substrate is divided into a first region containing a transistor and a second region containing a Schottky barrier diode, allowing independent optimization of each region's thermal characteristics. The transistor region can be designed for high-power switching while the diode region provides additional heat dissipation capacity, resolving the contradiction between high-power capability and heat dissipation by spatially separating and independently managing thermal loads in different substrate regions.
2Strength
If SiC material is used instead of silicon, then voltage withstand characteristics improve, but heat dissipation management becomes more challenging
Solution Approach 1:
The patent combines a transistor and a Schottky barrier diode on a single SiC substrate, creating a hybrid structure where the diode region serves dual purposes: electrical functionality and enhanced heat dissipation. The SiC material's superior voltage withstand characteristics are maintained while the integrated diode structure provides additional thermal management capability, resolving the contradiction between high-voltage performance and heat dissipation management.
3Temperature
If a larger substrate area is used, then heat dissipation improves, but device complexity increases
Solution Approach 1:
The second region of the substrate is designed with multi-functionality: it contains a Schottky barrier diode for electrical operation and simultaneously serves as an extended heat dissipation region. This universal design allows the same substrate area to fulfill both electrical and thermal management functions, improving heat dissipation efficiency without proportionally increasing device complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves heat dissipation efficiency by transferring heat generated by the transistor to the substrate of the diode, utilizing a larger area semiconductor substrate, thereby optimizing thermal management.
Implementation Method 1
improves heat dissipation efficiency by transferring heat generated by the transistor to the substrate of the diode
Data Source
AI summary
A power semiconductor device includes a substrate including SiC of a first conductivity type and including a first region and a second region, a drift layer of the first conductivity type on the substrate and in the first and second regions, a well region of a second conductivity type on the drift layer and in in the first region, a source region of the first conductivity type within the well region, a gate electrode on and extending along an upper surface of the well region, a source electrode connected to the source region in the first region, a metal layer connected to the drift layer in the second region, and a passivation layer covering the source electrode and the metal layer. The passivation layer defines a recessed portion between the first region and the second region.