SiC Semiconductor Electric Field Relaxation Structure
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Solution Overview
Problem
Conventional SiC semiconductor devices face reliability issues due to degradation of the passivation layer, especially during inspection and assembly processes, which can lead to long-term performance degradation and reduced reliability.
Innovation Solution
Incorporating an insulating layer within the opening portion of the passivation layer to limit the contact region of the surface electrode, thereby reducing direct contact with probes and preventing damage to the passivation layer, and separating the metal layer into portions to prevent cracks from extending to the passivation layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If the passivation layer directly covers the surface electrode with an opening portion for external coupling, then electrical external coupling is enabled, but the passivation layer degrades during inspection and assembly processes reducing reliability
Solution Approach 1:
An insulating layer is introduced as an intermediary between the passivation layer and the surface electrode. This insulating layer extends into the opening portion of the passivation layer, providing a protective buffer that prevents direct contact between external probes and the passivation layer during inspection processes, thereby preventing degradation while maintaining electrical coupling functionality
Solution Approach 2:
The insulating layer is positioned in advance within the opening portion of the passivation layer to provide protective cushioning against potential damage during subsequent inspection and assembly processes. This pre-positioned protective structure absorbs mechanical stresses and prevents direct impact on the passivation layer, ensuring long-term reliability
2Ease of operation
If the surface electrode is exposed through the passivation layer for external coupling, then electrical connection is achieved, but cracks can extend to the passivation layer causing degradation
Solution Approach 1:
The insulating layer serves as a mediator between the surface electrode and the passivation layer. By extending into the opening portion, it creates a protective barrier that prevents crack propagation from the electrode region to the passivation layer, thereby maintaining structural integrity while allowing electrical coupling
Solution Approach 2:
The insulating layer provides beforehand cushioning by being positioned within the opening portion before any potential crack formation or propagation occurs. This pre-positioned protective structure absorbs and distributes mechanical stresses, preventing cracks from reaching the passivation layer and compromising its structural integrity
Data Source
AI summary
Semiconductor device 1000 includes semiconductor 102, an electric field relaxation structure, at least one surface electrode 112, passivation layer 114, and insulating layer 115. Semiconductor layer 102 has a predetermined element region. The electric field alleviation structure is disposed on semiconductor 102 at an end of the element region. On semiconductor 102, surface electrode 112 is disposed inside the electric field alleviation structure when viewed in a normal direction of semiconductor 102. Passivation layer 114 covers the electric field alleviation structure and a peripheral portion of at least one surface electrode 112, and has an opening portion above surface electrode 112. On surface electrode 112, insulating layer 115 is disposed inside opening portion 114p so as to be separated from passivation layer 114. When viewed in the normal direction of semiconductor 102, insulating layer 115 is disposed so as to surround partial region 112a of surface electrode 112.