SiC-Si Superlattice Monolayers for Charge Carrier Mobility

The semiconductor structure is divided into multiple thin monolayer sheets stacked in alternating sequences of different materials (e.g., SiC and Si). Each monolayer is only a few atomic layers thick, creating a segmented superlattice structure that enables enhanced carrier mobility through reduced effective mass while maintaining manufacturability through sequential deposition processes

The patent employs composite material structures combining different semiconductor materials (SiC/Si superlattice) to achieve properties not possible with single materials. The alternating layers create a composite structure where the interface effects and material properties combine to reduce Schottky barrier height and enhance carrier mobility beyond what either material could achieve alone

The patent applies local quality enhancement by creating specific regions with different material compositions and properties at the interface between source/drain and channel regions. The SiC/Si superlattice structure provides locally optimized properties at the contact interface, reducing Schottky barrier height specifically where needed for improved carrier injection while maintaining appropriate properties in the channel region

The patent changes material parameters by introducing alternating monolayers of different bandgap materials (SiC and Si) with varying thicknesses. This parameter modification at the monolayer scale creates quantum mechanical effects and interface states that reduce the Schottky barrier height, enabling better thermal equilibrium and reduced contact resistance without compromising channel performance