High Purity SiC and SiOC Materials via Distillation
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Solution Overview
Problem
Current methods for producing high purity silicon carbide (SiC) and silicon oxycarbide (SiOC) materials are costly, inefficient, and fail to achieve the necessary purity levels for commercial applications, particularly for semiconductor-grade materials, due to contamination issues and high production costs.
Innovation Solution
A method involving the distillation of a liquid polysilocarb precursor formulation containing silicon, carbon, and oxygen, followed by curing and pyrolysis to produce high purity SiC and SiOC materials, achieving purities of at least 99.999% by controlling the molar ratios and processing conditions to minimize impurities and optimize purity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional methods are used to produce SiC and SiOC materials, then production costs are high and purity levels are insufficient, but the patent achieves high purity (≥99.999%) while reducing costs through a novel distillation and curing process
Solution Approach 1:
The patent changes the chemical composition parameters of the precursor material by incorporating specific ratios of silicon, carbon, and oxygen atoms in a polysilocarb formulation. This compositional parameter change enables the material to achieve ultra-high purity (≥99.999%) SiC and SiOC after pyrolysis, while the controlled curing process parameters (temperature, time, atmosphere) further optimize both purity and cost-effectiveness
Solution Approach 2:
The patent extracts and removes impurities from the final SiC and SiOC product through controlled pyrolysis of the polysilocarb precursor. The distillation step before curing also extracts volatile components, and the overall process design enables selective removal of unwanted elements while retaining the desired silicon carbide and silicon oxycarbide structures, achieving the required purity levels
2Reliability
If high purity materials are produced using conventional methods, then contamination issues arise and purity requirements for semiconductor applications are not met, but the patent achieves semiconductor-grade purity through controlled distillation and curing
Solution Approach 1:
The patent employs an inert atmosphere during the curing and pyrolysis processes to prevent oxidation and contamination of the polysilocarb precursor and the resulting SiC/SiOC material. This controlled environment protects the material from reacting with atmospheric gases and introduces no extraneous contaminants, which is critical for achieving semiconductor-grade purity
Solution Approach 2:
The patent performs distillation of the polysilocarb precursor material before curing to remove volatile impurities and unwanted components in advance. This preliminary purification step ensures that only the desired silicon, carbon, and oxygen components proceed to the curing and pyrolysis stages, preventing contamination and achieving the required purity levels for semiconductor applications
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces production costs and achieves the high purity required for commercial utilization, particularly in semiconductor applications, while also enabling the production of ultra-high purity SiOC ceramics that were previously unattainable in large quantities.
Implementation Method 1
distilling a liquid including silicon, carbon and oxygen
Implementation Method 2
pyrolysis to produce high purity SiC and SiOC materials
Data Source
AI summary
Organosilicon chemistry, polymer derived ceramic materials, and methods. Such materials and methods for making polysilocarb (SiOC) and Silicon Carbide (SiC) materials having 3-nines, 4-nines, 6-nines and greater purity. Processes and articles utilizing such high purity SiOC and SiC.