SiC Static Induction Transistor Layout for Double-Side Cooling
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Solution Overview
Problem
Conventional SIT devices suffer from large stray inductance and deteriorated RF performance due to the source being located at the upper portion, which increases stray inductance, and heat removal is inefficient as the drain is not directly connected to a heatsink.
Innovation Solution
The SIT device is designed with a source at the lower portion and includes a double side cooling system with a first and second heatsink, utilizing a silicon carbide (SiC) substrate and recessed gates with carbon gate buses, enhancing heat dissipation and reducing stray inductance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the source is located at the upper portion of the device, then the conventional structure is maintained, but stray inductance increases and RF performance deteriorates
Solution Approach 1:
The patent inverts the conventional SIT device structure by placing the source at the lower portion and the drain at the upper portion, rather than the traditional configuration. This inversion reduces stray inductance in the grounded source and improves RF performance while maintaining the device's functional characteristics
2Temperature
If the drain is not directly connected to a heat removal element, then the conventional structure is maintained, but heat removal efficiency is insufficient
Solution Approach 1:
The patent transitions from conventional single-side cooling to double side cooling by adding a second heatsink beneath the source region. This three-dimensional cooling architecture enables heat to be removed from both the top (drain side) and bottom (source side) of the device, significantly improving thermal management efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The design improves RF performance by minimizing stray inductance and effectively removes heat through a three-dimensional cooling system, maintaining high operating temperatures.
Implementation Method 1
a first heatsink over the drain
Implementation Method 2
a gate bus electrically coupled to the gate and including carbon
Data Source
AI summary
A silicon carbide (SiC) static induction transistor (SIT) includes a source, a gate disposed over the source and receiving a control signal, a drain disposed over the recessed gate and generating an output signal, an epitaxial pattern disposed between the source and the drain and including a protruding portion, and a gate bus electrically coupled to the gate and including carbon. A method of forming an SiC SIT transistor device includes providing a substrate including a source doped with dopants of a first conductivity type, forming an epitaxial pattern including a protruding portion over the source, forming a recessed gate over the source, forming a gate bus over the recessed gate, forming a drain over the gate bus and the epitaxial pattern, and forming a first heatsink over the drain.