SiC Submount with Conductive Contacts for Laser Diode Thermal Management

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Solution Overview

Problem

High power laser diodes require submounts that enable efficient heat dissipation and CTE matching to prevent thermal stress and ensure reliable operation, as existing substrates often have poor thermal conductivity or unacceptable coefficients of thermal expansion, leading to unreliable devices when using soft or hard solders.

Innovation Solution

The use of a thermally conductive, insulating silicon carbide substrate with conductive contact layers and a bonding contact that includes a thermally conductive layer of at least 0.5 μm, typically gold or copper, to provide superior thermal conductivity and CTE matching, allowing for the use of hard or soft solders and reducing thermal stress.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional substrates with poor thermal conductivity are used, then manufacturing cost is reduced, but heat dissipation efficiency deteriorates leading to unreliable operation

Engineering Contradiction:
Improvedevice reliabilityVSAvoidheat dissipation efficiency
Core Design Contradiction:
ReliabilityVSLoss of energy

Solution Approach 1:

The patent employs a composite substrate structure combining silicon carbide (providing thermal conductivity and CTE matching) with copper or gold contact layers (providing enhanced thermal pathways). This composite approach resolves the contradiction by integrating materials with complementary properties: SiC offers structural stability and thermal management while copper/gold layers provide excellent thermal conductivity for efficient heat dissipation, achieving both reliability and energy efficiency.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The patent optimizes the thickness of the copper or gold contact layers (at least 0.5 μm) to balance thermal conductivity performance with manufacturing constraints. By adjusting this critical parameter, the design achieves sufficient heat dissipation efficiency while controlling material costs and manufacturing complexity, thereby resolving the contradiction between reliability and energy loss.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If substrates with unacceptable CTE are used, then manufacturing simplicity is maintained, but thermal stress increases causing device failure

Engineering Contradiction:
Improvedevice reliabilityVSAvoidthermal stress
Core Design Contradiction:
ReliabilityVSStress or pressure

Solution Approach 1:

The patent selects silicon carbide as the substrate material specifically for its coefficient of thermal expansion (CTE) value that matches laser diode materials. This parameter selection is critical: SiC's CTE (~4.5-5.0 × 10^-6/K) closely matches GaAs and other common laser diode substrates, minimizing thermal stress during temperature cycling and ensuring long-term device reliability without requiring complex stress-compensation structures.

Inventive Principle:
Principle #35Parameter changes

3Ease of manufacture

If soft solders are used due to CTE mismatch, then manufacturing ease is improved, but device reliability deteriorates

Engineering Contradiction:
Improvesoldering easeVSAvoiddevice reliability
Core Design Contradiction:
Ease of manufactureVSReliability

Solution Approach 1:

By changing the substrate material parameter to silicon carbide with matched CTE, the patent eliminates the need for soft solders. The CTE matching enables the use of more reliable hard soldering or direct bonding techniques, improving both manufacturing precision and device reliability while maintaining ease of manufacture through standardized processes.

Inventive Principle:
Principle #35Parameter changes

4Loss of energy

If thick thermally conductive layers are used, then thermal conductivity is improved, but manufacturing complexity increases

Engineering Contradiction:
Improveheat dissipation efficiencyVSAvoidcontact layer structure
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The patent optimizes the thickness of copper or gold contact layers to at least 0.5 μm, providing sufficient thermal conductivity without excessive complexity. This parameter optimization balances heat dissipation performance with manufacturing feasibility, avoiding the need for overly complex multi-layer structures while achieving effective thermal management.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The composite structure of SiC substrate with copper or gold contact layers provides an elegant solution: the SiC handles structural and thermal management functions while the copper/gold layers provide enhanced thermal pathways. This division of functions achieves superior heat dissipation without requiring complex single-material structures, resolving the contradiction between thermal performance and manufacturing simplicity.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution achieves high thermal conductivity and CTE matching, reducing thermal stress and improving the reliability of high-power laser diode devices by effectively dissipating heat and maintaining device stability across thermal cycles.

Implementation Method 1

High power laser diodes require submounts that enable efficient heat dissipation

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 2

The bonding contact includes a thermally conductive layer of thickness of at least 0.5 μm

Methodology Applied
Scientific EffectThermal conduction: Conduction (thermal)

Implementation Method 3

a coefficient of thermal expansion (CTE) of a semiconductor material associated with the laser diode and a CTE of the substrate are matched

Methodology Applied
Scientific EffectThermal expansion: Thermal Expansion

Data Source

PatentUS10833474B2CTE-matched silicon-carbide submount with high thermal conductivity contacts
Publication Date: 2020.11.10 NLIGHT INC
  • US10833474B2 patent drawing
  • US10833474B2 patent drawing
  • US10833474B2 patent drawing

AI summary

Laser diode submounts include a SiC substrate on which a thick conductive layer is supplied to use in mounting a laser diode. The thick conductive layer is typically gold or copper, and can be electrically coupled to a base laser that is used to define laser diode couplings.