Silicon Carbide Substrate Carrier Surface Treatment for Radiant Heating
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Solution Overview
Problem
In semiconductor processing, the efficiency of radiant heating in thermal process chambers is reduced due to material deposition on chamber surfaces, limiting maximum processing temperatures and thermal uniformity across substrates, leading to increased downtime and processing costs.
Innovation Solution
Mechanical and electrochemical surface modifications of silicon carbide components in the substrate carrier and chamber components to enhance their optical absorption properties at wavelengths matching the radiation from radiant heating sources, forming oxide-containing layers or silicon carbide nanostructures, which increase the absorption coefficient and heating efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If chamber surfaces are cleaned frequently to maintain heating efficiency, then heating effectiveness is improved, but chamber downtime increases and processing costs increase
Solution Approach 1:
The substrate carrier surfaces are pre-modified with oxide-containing layers or nanostructures before use in the processing chamber. This preliminary modification ensures high optical absorption and heating efficiency from the start, preventing the degradation that would otherwise require frequent cleaning interruptions.
Solution Approach 2:
The patent applies a thin oxide-containing layer or nanostructure coating on the substrate carrier surfaces. These modified surfaces maintain their heating efficiency throughout the operational lifetime of the carrier without degrading, effectively making the heating surface a durable, maintenance-free component.
2Temperature
If radiant heating sources are used to heat substrates, then heating capability is provided, but material deposition on chamber surfaces reduces heat transfer efficiency and limits maximum processing temperature
Solution Approach 1:
The oxide-containing layers and nanostructures are applied specifically to the surfaces of the substrate carrier that are exposed to radiant heating. This localized modification optimizes absorption where it is most needed, without requiring changes to the entire chamber or heating sources.
Solution Approach 2:
The patent changes the optical parameters of the substrate carrier surfaces by forming oxide-containing layers or nanostructures. This modifies the absorption coefficient and optical properties to better match the spectrum of radiant heating sources, enabling more efficient energy transfer and higher processing temperatures.
3Productivity
If material is deposited on chamber surfaces during processing, then substrate processing is enabled, but heating efficiency decreases and thermal uniformity suffers
Solution Approach 1:
Instead of preventing material deposition on chamber surfaces or removing it through cleaning, the patent inverts the approach by applying oxide-containing modifications to the substrate carrier surfaces themselves. These modified surfaces maintain their optical absorption properties regardless of chamber conditions, ensuring consistent thermal uniformity throughout processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The modified surfaces improve thermal uniformity and allow for higher processing temperatures, increasing substrate heating efficiency by up to 8-9% without requiring additional heating sources, thus reducing downtime and costs.
Implementation Method 1
The modified surfaces change the substrate carrier's optical absorption properties at wavelengths close to the radiation delivered from radiant heating sources
Implementation Method 2
subjecting the second surface of the substrate carrier to a surface treatment process to roughen the second surface of the substrate carrier
Implementation Method 3
The oxide-containing layer may be silicon oxides and can be formed by exposing the second surface to an oxidizing atmosphere at a temperature of, for example, above about 800° C., or by an electrolysis process
Implementation Method 4
by an electrolysis process immersing the roughened second surface in an electrolyte (e.g., an aqueous sodium chloride (NaCl) salt solution) and electrically biasing the substrate carrier relative to an electrode immersed in the electrolyte
Implementation Method 5
the substrate carrier and surfaces of the processing chamber are heated by radiation from a radiant heating source
Data Source
AI summary
Embodiments of the present invention generally provide a process and apparatus for increasing the absorption coefficient of a chamber component disposed in a thermal process chamber. In one embodiment, a method generally includes providing a substrate carrier having a first surface and a second surface, the first surface is configured to support a substrate and being parallel and opposite to the second surface, subjecting the second surface of the substrate carrier to a surface treatment process to roughen the second surface of the substrate carrier, wherein the substrate carrier contains a material comprising silicon carbide, and forming an oxide-containing layer on the roughened second surface of the substrate carrier. The formed oxide-containing layer has optical absorption properties at wavelengths close to the radiation delivered from one or more energy sources used to heat the chamber component.