SiC Composite Substrate Orientation for High-Voltage Semiconductors
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The production of high-performance electronic semiconductor components, particularly those with high blocking voltages, is complex and costly due to the need for epitaxial layer deposition and monocrystalline carrier wafers, which also results in reduced charge carrier mobility and increased complexity.
Innovation Solution
A method for manufacturing a pretreated composite substrate with a monocrystalline SiC crystal, where the orientation of surfaces deviates by less than 0.5° from the c direction of the crystal structure, allowing for optimized performance and reduced complexity and cost, involving ion implantation using an energy filter and splitting the substrate to create a doped layer with specific dopant profiles.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If epitaxial layer deposition and monocrystalline carrier wafers are used, then manufacturing precision and voltage blocking performance are improved, but device complexity and manufacturing cost increase
Solution Approach 1:
The invention divides the semiconductor structure into two separate parts: a monocrystalline SiC substrate and an epitaxial layer. The monocrystalline substrate provides the necessary mechanical strength and voltage blocking capability, while the epitaxial layer contains the active device structures. This segmentation allows each part to be optimized independently and reduces overall manufacturing complexity.
Solution Approach 2:
The invention introduces an intermediate monocrystalline SiC substrate that serves as a carrier for the epitaxial layer. This substrate acts as a mediator that provides mechanical support and electrical isolation, enabling the epitaxial layer to be processed and mounted without requiring a complex monocrystalline carrier wafer structure.
2Manufacturing precision
If epitaxial layer deposition and monocrystalline carrier wafers are used, then voltage blocking performance is improved, but manufacturing cost increases
Solution Approach 1:
The invention divides the semiconductor structure into two separate parts: a monocrystalline SiC substrate and an epitaxial layer. The monocrystalline substrate provides the necessary mechanical strength and voltage blocking capability, while the epitaxial layer contains the active device structures. This segmentation allows each part to be optimized independently and reduces overall manufacturing complexity.
Solution Approach 2:
The invention replaces expensive monocrystalline carrier wafers with a more cost-effective monocrystalline SiC substrate that can be produced using established crystal growth techniques. The substrate serves its purpose as a mechanical and electrical support without requiring the same level of perfection as traditional carrier wafers, reducing manufacturing cost.
3Ease of manufacture
If 4° tilted wafer surface is used, then epitaxial layer deposition is enabled, but charge carrier mobility is reduced
Solution Approach 1:
The invention applies different surface orientations to different parts of the device structure. The monocrystalline SiC substrate has a 4° tilted surface optimized for epitaxial layer deposition, while the epitaxial layer itself is grown with optimal crystal orientation for charge carrier mobility. This local optimization allows each region to have the properties needed for its specific function.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in high-performance semiconductor components with reduced on-resistance and improved voltage stability, while minimizing complexity and cost, and preventing field punch-through, thus enhancing the overall efficiency and reliability of the semiconductor components.
Implementation Method 1
doping a first layer in the donor substrate by ion implantation using an energy filter
Data Source
AI summary
A electronic semiconductor component includes a crystal made of monocrystalline SiC, wherein the orientation of at least some subareas of a first surface of the SiC crystal extends substantially in a direction running perpendicularly to the c direction of the crystal structure of the crystal. Also disclosed is a manufacturing process.