SiC Substrate Epitaxy for Controlled Growth Step Height
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Solution Overview
Problem
Existing techniques for suppressing step bunching in SiC semiconductor substrates are unable to control the step height, which is essential for improving the operating performance and reliability of devices.
Innovation Solution
A manufacturing method for SiC semiconductor substrates that involves growing the substrate in a SiC—Si equilibrium vapor pressure environment, with a controlled atomic number ratio of Si/C exceeding 1, and a temperature of 1600°C or higher, to achieve a growth layer with steps of controlled height.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional techniques are used to suppress step bunching, then step bunching is reduced, but step height cannot be controlled
Solution Approach 1:
The invention changes the growth parameters by controlling the Si vapor pressure and atomic number ratio (Si/C > 1) during epitaxial growth. This allows simultaneous suppression of step bunching and control of step height, resolving the contradiction between reliability improvement and manufacturing precision requirement
Solution Approach 2:
The invention introduces dynamic control of growth conditions by adjusting Si vapor pressure and atomic ratio during the growth process. This enables real-time optimization of step height while maintaining step bunching suppression, achieving both reliability and precision goals
2Reliability
If step height is controlled to improve device performance, then operating performance improves, but additional growth control parameters are required
Solution Approach 1:
The invention utilizes Si vapor pressure and atomic number ratio as controllable parameters during epitaxial growth. By optimizing these parameters (Si/C > 1, controlled Si vapor pressure), the step height is controlled to improve device performance without requiring overly complex growth control systems
Solution Approach 2:
The invention performs preliminary control of step height during the epitaxial growth process itself, rather than requiring post-growth processing. This preliminary action integrates step height control into the existing growth parameters, avoiding additional complexity in subsequent device manufacturing steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for the control of step height on SiC semiconductor substrates, thereby reducing defects associated with step bunching and enhancing the operating performance and reliability of SiC semiconductor devices.
Implementation Method 1
growing the substrate in a SiC—Si equilibrium vapor pressure environment
Implementation Method 2
a growth process that grows a SiC substrate in a SiC—Si equilibrium vapor pressure environment
Implementation Method 3
grows a SiC substrate in a SiC—Si equilibrium vapor pressure environment
Data Source
AI summary
An object of the present invention is to provide a SiC semiconductor substrate having a growth layer with a controlled step height, a manufacturing method thereof, and a manufacturing device thereof. The method includes: a growth process that grows a SiC substrate 10 in a SiC—Si equilibrium vapor pressure environment. In this way, when the SiC substrate 10 is grown in the SiC—Si equilibrium vapor pressure environment, it is possible to provide a SiC semiconductor substrate in which the step height of the growth layer is controlled.