SiC Semiconductor Device Terminal Pin Bonding
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Solution Overview
Problem
Conventional power semiconductor devices using silicon face limitations in achieving both high current and high speed switching, with silicon carbide (SiC) emerging as a promising material but facing challenges in heat dissipation and reliability due to increased temperature, particularly in high-frequency applications.
Innovation Solution
A semiconductor device utilizing a silicon carbide substrate with a planar layout of electrode pads and terminal pins bonded through a plated film, incorporating over voltage protection, current sensing, temperature sensing, and computing circuit regions, which enhances reliability and reduces heat dissipation issues by eliminating the need for bonding wires.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If bonding wires are used to connect front surface electrodes in conventional silicon semiconductor devices, then the device structure is simple and manufacturing is easy, but the adhesion drops at high temperatures affecting reliability
Solution Approach 1:
The invention extracts and eliminates the bonding wire component from the system. By removing the bonding wire and replacing it with a direct terminal pin-to-electrode pad connection, the adhesion problem at high temperatures is solved since there is no bonding wire to lose adhesion. The terminal pin is directly bonded to the electrode pad through a plated film, creating a more reliable high-temperature connection.
Solution Approach 2:
The invention introduces a plated film as an intermediary layer between the terminal pin and the electrode pad. This plated film (comprising copper, nickel, and tin layers) serves as a mediator that ensures reliable electrical and mechanical connection while maintaining adhesion at high temperatures, replacing the function of bonding wires without suffering from their adhesion limitations.
2Power
If silicon carbide is used as semiconductor material to achieve high voltage and high speed, then performance improves, but heat dissipation becomes more difficult and reliability decreases
Solution Approach 1:
The invention extracts and eliminates the bonding wire that was causing heat accumulation and adhesion problems. By removing this component and implementing direct terminal pin connections, the patent reduces thermal resistance and improves heat dissipation efficiency, allowing silicon carbide devices to operate more effectively at high temperatures.
Solution Approach 2:
The invention changes the connection structure parameters from wire bonding to direct terminal pin bonding. This structural parameter change reduces the thermal path resistance and improves heat dissipation, enabling the silicon carbide semiconductor device to handle higher power while maintaining reliability at elevated temperatures.
3Reliability
If terminal pins are bonded to electrode pads through plated film, then adhesion is maintained at high temperatures, but manufacturing process becomes more complex
Solution Approach 1:
The invention applies preliminary action by forming the plated film on the electrode pad surface before bonding the terminal pin. The plated film (copper, nickel, tin layers) is pre-deposited through sputtering and other processes, creating a ready-to-bond surface that ensures high-temperature adhesion. This preliminary preparation simplifies the subsequent bonding process while guaranteeing reliable connection.
Solution Approach 2:
The invention changes the material parameters of the connection interface by introducing a multi-layer plated film structure. This material parameter change enhances adhesion at high temperatures while the standardized plating processes (sputtering, electroplating) keep the manufacturing complexity within acceptable limits for high-reliability applications.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables high-reliability semiconductor devices capable of handling high temperatures and frequencies, with improved current capacity and reduced size, while maintaining high adhesion of terminal pins even at elevated temperatures.
Implementation Method 1
bonding a terminal pin to a source electrode through a plated film
Implementation Method 2
maintaining high adhesion of terminal pins even at elevated temperatures
Implementation Method 3
a source region, a drift region, and a substrate, in this order, are formed in a silicon carbide base body
Implementation Method 4
loss occurring at the high-voltage semiconductor device is reduced; however, a carrier frequency that is ten times that of a conventional semiconductor device using silicon or greater is applied to the high-voltage semiconductor device when being used in an inverter
Data Source
AI summary
A semiconductor device includes a plurality of semiconductor switching elements disposed on a single semiconductor substrate comprising a semiconductor having a bandgap that is wider than that of silicon; and a plurality of electrode pads that are disposed in a predetermined planar layout on a front surface of the semiconductor substrate, the plurality of electrode pads each being electrically connected to the plurality of semiconductor switching elements. A plurality of terminal pins to externally carry out voltage of the electrode pads is bonded through a plated film to all of the plurality of electrode pads by solder.