SiC Semiconductor Device Trench Source Structure Miniaturization
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current semiconductor devices face challenges in miniaturization due to the complex arrangement of trench source structures, body connection regions, and source connection regions, which require significant space and alignment precision, leading to increased device size and potential electrical variations.
Innovation Solution
The semiconductor device incorporates a design where trench source structures, body connection regions, and source connection regions are arranged in a specific configuration on the SiC chip, allowing for reduced dimensions and improved alignment, enabling miniaturization without the need for adjacent placement in the second direction, thus reducing the overall device size and preventing in-plane variations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If trench source structures, body connection regions, and source connection regions are arranged in a conventional configuration, then electrical connection is achieved, but device size increases and alignment precision requirements increase
Solution Approach 1:
The patent combines the body connection region and source connection region into a single integrated structure formed between adjacent trench source structures. This merging eliminates the need for separate adjacent placement of body and source connections in the second direction, reducing the overall device area while maintaining proper electrical connections to both the body region and source region through the shared connection structure
Solution Approach 2:
The patent transitions from a conventional planar arrangement where body and source connections are placed adjacent to each other in the second direction to a configuration where connections are established through the first direction (perpendicular to trench source structures). This dimensional reorganization allows connections to be formed between regions separated in the first direction rather than requiring adjacent placement in the second direction, thereby reducing device footprint
2Area of stationary object
If trench source structures are placed closer together for miniaturization, then device size decreases, but alignment precision requirements increase
Solution Approach 1:
The connection structure formed between adjacent trench source structures serves multiple functions simultaneously: it provides the body connection region for electrical connection to the body region, provides the source connection region for electrical connection to the source region, and acts as an integrated contact structure that eliminates the need for separate alignment of body and source connections. This multi-functionality reduces alignment precision requirements while enabling miniaturization
Data Source
AI summary
A semiconductor device includes a semiconductor chip having a principal surface, a first-conductivity-type drift region, a second-conductivity-type body region, a first-conductivity-type source region, a plurality of trench source structures that are formed at the principal surface so as to cross the source region and the body region and so as to reach the drift region and that are arranged with intervals therebetween in a first direction, a second-conductivity-type body connection region formed in a region between two of the trench source structures that are adjacent in the surface layer portion of the body region so as to be electrically connected to the body region, and a first-conductivity-type source connection region formed in a region between two of the trench source structures that are adjacent in a region differing from the body connection region in the surface layer portion of body region so as to be electrically connected to source region.