Silicon Carbide Underlayer for EUV Resist Pattern Transfer
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Solution Overview
Problem
The existing methods for transferring a resist pattern formed of a resist film for EUV to a spin on carbon film have low throughput due to pattern collapse caused by low adhesion between the EUV resist film and the silicon-containing film, necessitating additional adhesion layers that increase processing complexity.
Innovation Solution
A substrate processing method involving the formation of a silicon carbide film on a spin on carbon film, followed by a chemically amplified resist film for EUV, which enhances the adhesion and selectivity of the resist pattern, allowing high-throughput transcription.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a silicon-containing film is used as the base film for EUV resist film, then the resist pattern can be formed, but the adhesion between the EUV resist film and the silicon-containing film is low causing pattern collapse
Solution Approach 1:
A carbon-containing film is introduced as an intermediate layer between the silicon-containing film and the EUV resist film. This intermediary carbon layer improves the adhesion between the silicon-containing film and the EUV resist film, preventing pattern collapse during the lithography process.
Solution Approach 2:
The base structure is changed from a simple silicon-containing film to a composite structure consisting of a silicon-containing film and a carbon-containing film. This composite material approach combines the benefits of both materials: the silicon-containing film provides the necessary mechanical support while the carbon-containing film provides the adhesion interface for the EUV resist film.
2Reliability
If additional adhesion layers are added to improve adhesion, then pattern collapse is prevented, but the processing complexity increases
Solution Approach 1:
The carbon-containing film serves multiple functions simultaneously: it acts as an adhesion promoter between the silicon-containing film and the EUV resist film, and also functions as part of the overall film structure. This multi-functionality reduces the need for separate dedicated adhesion layers, thereby simplifying the overall processing complexity.
3Reliability
If additional adhesion layers are added to improve adhesion, then pattern collapse is prevented, but the processing time increases
Solution Approach 1:
The carbon-containing film is formed by oxidizing a carbon-rich film that is deposited in the same processing step as the silicon-containing film. This merging of steps eliminates the need for separate adhesion layer deposition and oxidation processes, thereby reducing the overall processing time while still achieving the necessary adhesion improvement.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables effective transcription of the resist pattern to the spin on carbon film with improved adhesion and selectivity, reducing processing time and complexity while preventing pattern collapse.
Implementation Method 1
a silicon-containing film, which is then oxidized to form a silicon oxide film
Data Source
AI summary
A substrate processing method includes forming a silicon carbide film on a spin on carbon film formed on a substrate; and forming a chemically amplified resist film for EUV on the silicon carbide film.