SiC UV Photodetector Structure for Low Dark Current Breakdown Control

The patent applies curvature by forming a sloped lateral surface on the semiconductor body and creating a recessed peripheral area that follows this curvature. This curved geometry naturally confines the electrical field within the active area and prevents field extension toward the periphery, thereby reducing leakage current and dark current while maintaining detection efficiency through proper active area configuration.

The patent transitions from a planar two-dimensional structure to a three-dimensional structure by creating a recessed peripheral area and sloped lateral surface. This dimensional change allows the active area to be confined within a specific depth range, enabling better electrical field confinement and reduced peripheral leakage while maintaining high detection efficiency through optimized vertical and lateral geometry.

The sloped lateral surface and recessed peripheral area create a curved geometry that confines the electrical field vertically within the active area while preventing lateral field extension. This allows the active area to be sufficiently large for high detection efficiency without causing peripheral leakage that would reduce breakdown voltage and cause soft breakdown.

The patent applies different geometric properties to different regions: the active area maintains a planar top surface for optimal light detection, while the peripheral area is recessed with a sloped lateral surface for field confinement. This local differentiation allows the active area to be large for high efficiency while the periphery geometry prevents leakage current that would reduce breakdown voltage.