SiC VSD Controller for ESP Motors

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Conventional electric submersible pump (ESP) variable speed drive (VSD) controllers suffer from high switching losses and large footprints due to limitations in silicon power semiconductor devices, particularly in offshore applications where space is limited and efficiency is crucial.

Innovation Solution

The implementation of silicon carbide (SiC) power semiconductor modules, including MOSFETs and IGBTs, in the VSD controller, which increases switching frequency and reduces footprint by minimizing switching losses, allowing for a more efficient and compact power system.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If silicon power semiconductor devices are used in the VSD controller, then the device can operate reliably, but switching losses are high and the footprint is large

Engineering Contradiction:
Improveswitching lossesVSAvoidfootprint size
Core Design Contradiction:
Loss of energyVSObject-generated harmful factors

Solution Approach 1:

The patent applies parameter changes by transitioning from silicon power semiconductor devices to silicon carbide (SiC) devices, which fundamentally alter the material parameters including bandgap energy, thermal conductivity, and breakdown electric field strength. This material parameter change enables higher switching frequencies and lower switching losses while reducing the required footprint of the VSD controller and PWM filter inductors

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent employs composite material strategy by integrating SiC power semiconductor modules with traditional copper windings and magnetic core materials in the PWM filter inductors. The SiC devices complement the passive components to create a hybrid system that achieves both compact size and high efficiency

Inventive Principle:
Principle #40Composite materials

2Area of stationary object

If switching frequency is increased to reduce footprint, then the VSD controller becomes more compact, but switching losses increase with conventional silicon devices

Engineering Contradiction:
ImproveVSD controller footprintVSAvoidswitching losses
Core Design Contradiction:
Area of stationary objectVSLoss of energy

Solution Approach 1:

The patent resolves this contradiction by changing the material parameter of the power semiconductor from silicon to silicon carbide. SiC's wider bandgap and higher thermal conductivity allow the device to operate at higher switching frequencies with lower switching losses, breaking the traditional trade-off between frequency and losses that constrained silicon-based designs

Inventive Principle:
Principle #35Parameter changes

3Reliability

If conventional silicon power semiconductor devices are used, then the system is proven reliable, but VSD efficiency is limited to 97% with significant power dissipation

Engineering Contradiction:
Improvedevice reliabilityVSAvoidpower dissipation
Core Design Contradiction:
ReliabilityVSLoss of energy

Solution Approach 1:

The patent maintains reliability while reducing power dissipation by changing the material parameters of the power semiconductor. SiC devices offer higher thermal conductivity and higher breakdown electric field strength, enabling operation at higher temperatures and voltages with lower losses, thus improving efficiency to 98% while maintaining or enhancing reliability

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution enhances VSD efficiency to 98% and reduces the size of the PWM filter inductor footprint by 10-35%, providing a more efficient and compact power system for ESP motors.

Implementation Method 1

a DC link including a DC smoothing capacitor that smooths the direct current

Methodology Applied
Scientific EffectCapacitance: Capacitance

Implementation Method 2

an inverter active switch section that converts the smoothed direct current to a pulse width modulated (PWM) output voltage, the inverter active switch section including at least one silicon carbide (SiC) power semiconductor module

Methodology Applied
Scientific EffectSilicon carbide semiconductor switching:

Implementation Method 3

a PWM filter that filters the PWM output voltage to produce near sinusoidal voltages, the PWM filter including a plurality of inductors

Methodology Applied
Scientific EffectElectromagnetic induction: Electromagnetic Induction

Data Source

PatentUS10374542B2Electric submersible pump variable speed drive controller
Publication Date: 2019.08.06 HALLIBURTON ENERGY SERVICES INC
  • US10374542B2 patent drawing
  • US10374542B2 patent drawing
  • US10374542B2 patent drawing

AI summary

An electric submersible pump (ESP) variable speed drive (VSD) controller is described. A VSD control system includes a pump assembly including an induction motor operatively coupled to a pump, a power cable and a transformer electrically coupled between the induction motor and a VSD controller that controls a speed of the induction motor, the VSD controller including a converter section that sends a direct current (DC), a DC link including a DC smoothing capacitor that smooths the DC, an inverter that converts the smoothed DC to a pulse width modulated (PWM) output voltage, the inverter including at least one silicon carbide (SiC) power semiconductor module, and a PWM filter that filters the PWM output voltage to produce near sinusoidal voltages, the PWM filter including inductors, and the PWM filter sending voltage to the transformer.