SiC Wafer FOUP Layout for 200 mm Transport Without Contact
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Conventional transport carriers for silicon carbide semiconductor substrates with diameters of 200 mm or more are limited to accommodating a maximum of 25 substrates due to deformation and warpage issues, leading to poor manufacturability and potential substrate contact during transportation.
Innovation Solution
The use of a Front Opening Unified Pod (FOUP) as a transport carrier that can accommodate up to 25 silicon carbide semiconductor substrates with a diameter of 200 mm or more, featuring a partition portion with support points and a larger distance between substrates to prevent contact and enhance manufacturability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If a standard mechanical interface (SMIF) is used as a transport carrier, then the housing size is compact and easy to handle, but the distance between accommodated SiC semiconductor substrates is short causing substrates to come into contact during transportation
Solution Approach 1:
The transport carrier housing is divided into multiple compartments, with each compartment designed to accommodate a single SiC semiconductor substrate. This segmentation ensures that substrates are physically separated and cannot come into contact with each other during transportation, while still maintaining a compact overall housing structure for easy handling.
2Productivity
If multiple SiC semiconductor substrates with diameter of 200 mm or more are transported in a compact carrier, then transportation efficiency is improved, but substrates come into contact and defects occur
Solution Approach 1:
The carrier design utilizes three-dimensional space optimization by arranging substrates in multiple layers or levels within the housing. Support structures are positioned at specific heights and locations to maintain proper spacing between substrates in both horizontal and vertical dimensions, allowing maximum substrate capacity while preventing contact and defects.
3Ease of operation
If the housing for accommodating SiC semiconductor substrates is made small, then the carrier is more compact and easier to handle, but 25 semiconductor substrates cannot be transported as one unit
Solution Approach 1:
The carrier employs a nested arrangement where substrates are positioned in concentric or layered patterns within the housing. Smaller substrates can be arranged around larger ones, or substrates are stacked in multiple levels with appropriate spacing, maximizing the use of available internal volume while maintaining compact external dimensions for easy handling.
Data Source
AI summary
A method of manufacturing a semiconductor device includes a step of performing processing and a step of transporting. In the step of performing processing, processing for forming a semiconductor element is performed on a semiconductor substrate made from silicon carbide and having a diameter W of 200 mm or more. In the step of transporting, at least one of before and after processing, a semiconductor substrate is accommodated and transported in a FOUP, which is a transport carrier capable of accommodating a maximum of 25 semiconductor substrates.