SiC Wafer Separation Using Laser-Cleaved Bonded Support Structures
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Solution Overview
Problem
Current semiconductor device manufacturing methods face inefficiencies in wafer processing and chip separation, particularly in the handling and reuse of SiC wafers, leading to increased costs and reduced manufacturing efficiency.
Innovation Solution
A method involving the use of supporting members for SiC wafers, where an amorphous bonding layer is formed between the wafers, and a modified layer is created using laser irradiation to facilitate horizontal cutting and separation, allowing for efficient reuse and handling of SiC wafers, reducing the need for grinding and minimizing material waste.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If traditional grinding and cutting methods are used to separate semiconductor chips from wafers, then chip separation can be achieved, but manufacturing efficiency is reduced and material waste increases
Solution Approach 1:
The wafer is divided into multiple semiconductor chips through precise cutting along predetermined lines. The cutting process segments the continuous wafer into discrete functional units (chips) that can be individually processed and packaged, achieving both separation and efficient utilization of the wafer material.
Solution Approach 2:
Cutting lines are predetermined and marked on the wafer before the actual cutting process. This preliminary action allows for precise positioning and planning of the cutting paths, enabling efficient chip separation while minimizing material waste by optimizing the layout and arrangement of chips on the wafer.
2Productivity
If supporting members are added to enable wafer reuse, then manufacturing efficiency improves, but device complexity increases
Solution Approach 1:
Supporting members are introduced as intermediary components between the wafer and the processing equipment. These supporting members hold multiple wafers in a stacked configuration and facilitate their handling, positioning, and processing. By using this intermediary structure, the system achieves wafer reuse and improved manufacturing efficiency without requiring complex modifications to the wafers themselves.
Solution Approach 2:
The supporting members are designed to perform multiple functions: holding wafers in a stacked arrangement, facilitating transportation between processing steps, enabling precise positioning during processing, and supporting the wafer stack during cutting operations. This multi-functionality reduces the need for multiple separate components and systems.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances manufacturing efficiency by enabling the repeated use of SiC wafers, reducing material consumption, and improving the handling and processing of SiC semiconductor devices, thereby lowering production costs and improving the yield of functional devices.
Implementation Method 1
a step which forms a modified layer in the amorphous bonding layer by a laser light irradiation method
Implementation Method 2
forms a modified layer in the amorphous bonding layer by a laser light irradiation method
Data Source
AI summary
A semiconductor device manufacturing method includes a step which prepares a wafer source and a supporting member, a supporting step which supports the wafer source by the supporting member, and a wafer separating step in which the wafer source is cut in a horizontal direction from a thickness direction intermediate portion of the wafer source to separate, from the wafer source, a wafer structure which includes the supporting member and a wafer cut away from the wafer source.