SiC Wafer Laser Peeling Automation
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Solution Overview
Problem
The existing methods for producing SiC wafers from single-crystal SiC ingots are inefficient due to manual processes and high material wastage, with low productivity and high unit costs, particularly in forming, peeling, and grinding steps.
Innovation Solution
A wafer producing apparatus that automates the process using an ingot grinding unit, laser applying unit, wafer peeling unit, and delivery unit assembly to grind, form a peel-off layer, and peel SiC wafers from single-crystal SiC ingots, incorporating pulsed laser technology and automated handling for increased efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If manual processes are used for forming, peeling, and grinding SiC wafers, then flexibility and control are maintained, but production efficiency and productivity are poor
Solution Approach 1:
The patent replaces manual mechanical operations with automated systems. Specifically, manual wafer formation, peeling, and grinding operations are substituted with automated laser applying means, wafer peeling means, and grinding means that are integrated into a unified automated apparatus, thereby significantly improving production efficiency
Solution Approach 2:
The patent combines multiple previously separate manual processes (wafer formation, peeling, and grinding) into a single integrated automated apparatus. The delivery unit assembly coordinates the movement of the single-crystal SiC ingot through different processing stations, merging these operations into a streamlined automated workflow that improves productivity
2Quantity of substance
If wire saw slicing is used to divide ingots into wafers, then wafers can be produced, but 70% to 80% of the ingot stock is discarded
Solution Approach 1:
The patent extracts and utilizes previously wasted portions of the ingot. By using laser forming and peeling technology, the process can create wafers from different sections of the ingot that would have been discarded in traditional wire saw slicing, thereby reducing material wastage while maintaining wafer production quantity
Solution Approach 2:
The patent changes the fundamental processing parameters from mechanical slicing to laser-based forming and peeling. This parameter change enables more efficient utilization of the ingot material by allowing precise control over wafer thickness and positioning, reducing the 70-80% wastage associated with traditional wire saw methods
3Ease of manufacture
If single-crystal SiC ingots are cut with wire saw, then wafers can be sliced, but the process is uneconomical due to high unit cost and low efficiency
Solution Approach 1:
The patent replaces the mechanical wire saw cutting system with a laser-based system. The laser applying means can rapidly form and peel wafers without the slow mechanical slicing process, thereby improving cutting speed and reducing unit costs while maintaining manufacturing capability
Solution Approach 2:
The patent performs preliminary laser processing to create a peel-off layer before actual wafer separation. This preliminary action using laser energy softens and prepares the material structure, enabling faster and more economical wafer production compared to direct mechanical wire saw cutting
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus significantly enhances production efficiency by automating the formation and peeling of SiC wafers, reducing material wastage, and improving productivity, leading to cost-effective high-yield SiC wafer production.
Implementation Method 1
laser applying means for applying a pulsed laser beam having a wavelength that is transmittable through the single-crystal SiC ingot while positioning a focal point of the pulsed laser beam in the single-crystal SiC ingot
Implementation Method 2
applying a pulsed laser beam having a wavelength that is transmittable through the single-crystal SiC ingot... thereby forming a peel-off layer in the single-crystal SiC ingot
Implementation Method 3
grinding means for grinding and planarizing an upper surface of the single-crystal SiC ingot held on the first holding table
Data Source
AI summary
A wafer producing apparatus for producing an SiC wafer from a single-crystal SiC ingot includes an ingot grinding unit, a laser applying unit that applies a pulsed laser beam having a wavelength that is transmittable through the single-crystal SiC ingot while positioning a focal point of the pulsed laser beam in the single-crystal SiC ingot at a depth corresponding to the thickness of the SiC wafer to be produced from an upper surface of the single-crystal SiC ingot, thereby forming a peel-off layer in the single-crystal SiC ingot, a wafer peeling unit that peels the SiC wafer off the peel-off layer in the single-crystal SiC ingot, and a delivery unit assembly that delivers the single-crystal SiC ingot between the ingot grinding unit, the laser applying unit, and the wafer peeling unit.