SiC Wafer Laser Separation Automation
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Solution Overview
Problem
The existing methods for producing wafers from ingots are inefficient, with high material wastage and low productivity, particularly for hexagonal single-crystal SiC ingots, due to manual processes and the difficulty in cutting and polishing, leading to high unit costs and low production efficiency.
Innovation Solution
A wafer producing apparatus that automates the process by incorporating an ingot grinding unit, a laser irradiation unit for forming a separation layer, and a wafer separating unit, utilizing a belt conveyor system and storage units to streamline the production workflow, enabling automated production of wafers from ingots.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If wire saw cutting and manual polishing are used to produce wafers from ingots, then wafer surfaces can be finished into mirror surfaces, but most part (70% to 80%) of the ingot is discarded and production efficiency is low
Solution Approach 1:
The patent replaces the mechanical wire saw cutting system with a laser-based separation system. The laser irradiation unit forms a separation layer inside the ingot by irradiating with laser beams, and the wafer separating unit separates the wafer along this separation layer, eliminating the need for mechanical cutting and subsequent extensive polishing, thereby improving both productivity and reducing material waste.
Solution Approach 2:
The patent applies preliminary action by forming a separation layer inside the ingot before actual separation. The laser irradiation unit creates a predetermined separation layer at the desired cutting plane, which then guides the wafer separation process. This preliminary formation of the separation layer enables more efficient and precise wafer extraction with reduced material waste.
2Ease of manufacture
If wire saw cutting is used for hexagonal single-crystal SiC ingots, then wafers can be produced, but cutting is difficult and needs considerable time due to high hardness
Solution Approach 1:
The patent replaces mechanical cutting with laser irradiation. The laser irradiation unit forms a separation layer by irradiating the ingot with laser beams, which does not require mechanical force to overcome the high hardness of SiC. This substitution dramatically reduces cutting time and makes the manufacturing process easier.
Solution Approach 2:
The patent changes the physical state and properties of the material through laser irradiation. By controlling the laser parameters (wavelength, power, irradiation pattern), the patent creates a separation layer without mechanical contact, effectively changing the approach from mechanical removal to thermal/optical processing, thereby reducing cutting time for hard materials like SiC.
3Ease of manufacture
If manual processes are used for forming separation layer, separating wafers, and grinding surfaces, then processing can be completed, but production efficiency is low
Solution Approach 1:
The patent merges multiple manual operations into an integrated automated system. The ingot grinding unit, laser irradiation unit, and wafer separating unit are combined into a single automated production line, where the tray conveys the ingot through all processing stages automatically. This merging of operations eliminates manual intervention and significantly improves production efficiency.
Solution Approach 2:
The patent implements self-service through automated conveying and processing. The tray automatically conveys the ingot from the ingot stocker through the ingot delivery unit to the processing units and back. The system performs grinding, laser irradiation, and separation automatically without manual handling between steps, enabling continuous operation and improved productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus significantly improves production efficiency by automating the wafer production process, reducing material wastage, and enhancing productivity, thereby lowering the unit cost and increasing the efficiency of wafer production.
Implementation Method 1
laser irradiation means that positions a focal point of a laser beam with such a wavelength as to be transmitted through the ingot to a depth corresponding to a thickness of a wafer to be produced from the upper surface of the ingot held by the second holding table and irradiates the ingot with the laser beam to form a separation layer
Data Source
AI summary
A wafer producing apparatus includes an ingot grinding unit that grinds the upper surface of an ingot to planarize the upper surface, a laser irradiation unit that positions the focal point of a laser beam with such a wavelength as to be transmitted through the ingot to a depth corresponding to the thickness of a wafer to be produced from the upper surface of the ingot and irradiates the ingot with the laser beam to form a separation layer, a wafer separating unit that separates the wafer from the ingot, and a tray having a support part that supports the separated wafer.