SiC Wafer Laser Separation Apparatus
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Solution Overview
Problem
The existing methods for producing SiC wafers from single crystal SiC ingots are inefficient due to manual processes, leading to reduced productivity and high material wastage, as 70-80% of the ingot is discarded during cutting and polishing, and the high unit price of SiC ingots results in economic challenges.
Innovation Solution
A wafer producing apparatus that automates the production of SiC wafers by using a holding unit, a flattening unit, a laser applying unit for forming a separation layer, a wafer separating unit, and a wafer storing unit, which includes an ingot storing unit and an ingot transfer unit, allowing for sequential processing and improved efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of substance
If wire saw cutting is used to slice the SiC ingot, then the wafer can be produced, but 70-80% of the ingot is discarded causing poor economy and low productivity
Solution Approach 1:
The invention extracts only the necessary portion of the SiC ingot for wafer production by using laser processing to create a separation layer at a specific depth, allowing the wafer to be separated without discarding the majority of the ingot material. The laser beam is focused at a predetermined depth corresponding to the desired wafer thickness, enabling precise extraction of the required amount.
Solution Approach 2:
The invention replaces the mechanical wire saw cutting system with a laser-based processing system. The laser applying unit uses optical energy to form a separation layer inside the ingot, which is then broken to separate the wafer. This substitution eliminates the need for mechanical cutting that discards 70-80% of the material, significantly reducing material wastage while improving productivity.
2Ease of manufacture
If wire saw cutting is used to slice the SiC ingot, then the wafer can be produced, but the high hardness of SiC requires considerable cutting time reducing productivity
Solution Approach 1:
The invention replaces the mechanical wire saw cutting process with laser processing. The laser applying unit focuses a laser beam at a predetermined depth inside the SiC ingot to form a separation layer, which is then broken to separate the wafer. This optical-based approach overcomes the difficulty of cutting hard SiC material mechanically, significantly reducing processing time and improving productivity.
Solution Approach 2:
The invention changes the processing method from mechanical cutting to laser processing, altering the physical parameters of the operation. The laser beam parameters (wavelength, focal depth, power) are optimized to efficiently create the separation layer in the hard SiC material, enabling faster and easier processing compared to mechanical wire saw cutting.
3Ease of operation
If manual operations are used for forming separation layer, separating wafer, and flattening surface, then the process can be completed, but production efficiency is reduced
Solution Approach 1:
The invention implements an automated system where the apparatus performs all operations including holding the ingot, flattening the surface, applying laser to form separation layer, separating the wafer, and storing the product. The system serves itself by integrating multiple functions into a cohesive automated workflow, eliminating the need for manual operations and significantly improving production efficiency.
Solution Approach 2:
The invention merges multiple discrete manual operations into a single integrated automated apparatus. The holding unit, flattening unit, laser applying unit, wafer separating unit, and wafer storing unit are combined into one system that automatically performs the complete wafer production process, improving efficiency by eliminating manual intervention and enabling continuous operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus enables the automatic production of SiC wafers with increased efficiency, reducing material wastage and improving productivity by automating the formation, separation, and storage of wafers from SiC ingots.
Implementation Method 1
a laser applying unit for setting the focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the upper surface of the ingot held by the holding unit, the predetermined depth corresponding to the thickness of the wafer to be produced, and next applying the laser beam to the ingot to thereby form a separation layer for separating the wafer from the ingot
Data Source
AI summary
A SiC wafer is produced from a single crystal SiC ingot. Wafer producing apparatus includes a holding unit for holding the ingot, a flattening unit for grinding the upper surface of the ingot, thereby flattening the upper surface, a laser applying unit for setting the focal point of a laser beam having a transmission wavelength to the ingot inside the ingot at a predetermined depth from the upper surface of the ingot, the predetermined depth corresponding to the thickness of the wafer to be produced, and next applying the laser beam to the ingot to thereby form a separation layer for separating the wafer from the ingot, a wafer separating unit for holding the upper surface of the ingot to separate the wafer from the ingot along the separation layer, and a wafer storing unit for storing the wafer separated from the ingot.