SiC Wafer Wire Saw Alignment for High-Precision Slicing
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Solution Overview
Problem
Conventional methods for manufacturing SiC wafers are complex, costly, and difficult to achieve high-quality results due to their intricate processes and device structures.
Innovation Solution
A semiconductor crystal wafer manufacturing device that utilizes a groove machining drum grindstone with convex portions and a wire saw device equipped with an imaging means to accurately arrange wires in concave grooves, allowing for high-accuracy cutting of semiconductor crystal ingots into slices by detecting and adjusting the deviation angle of the wires.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple complex manufacturing processes are used to manufacture SiC wafers, then manufacturing precision can be maintained, but device complexity and manufacturing cost increase significantly
Solution Approach 1:
The patent combines multiple separate manufacturing processes (ingot forming, slicing, planarization, marking, and chamfering) into an integrated wire saw cutting system. The groove machining drum grindstone and wire saw device work together in a single coordinated operation to perform what traditionally required multiple sequential processes, thereby reducing device complexity while maintaining wafer quality.
Solution Approach 2:
The wire saw device is designed with multi-functionality, where the groove machining drum grindstone not only prepares the ingot surface but also guides the wires for precise cutting. The imaging means and slider mechanism are integrated into the wire saw device, allowing it to perform both cutting and measurement functions, reducing the need for separate dedicated equipment for each operation.
2Manufacturing precision
If conventional manufacturing methods are used, then manufacturing precision can be achieved, but manufacturing cost increases due to complex processes
Solution Approach 1:
By merging multiple manufacturing operations into a single wire saw cutting system with integrated groove machining and slicing capabilities, the patent reduces the number of process steps, equipment needed, and associated costs while maintaining the precision required for high-quality SiC wafer production.
3Device complexity
If the manufacturing process is simplified, then device complexity and cost are reduced, but manufacturing precision and quality stability become difficult to maintain
Solution Approach 1:
The patent incorporates imaging means that captures images of the wires in the concave grooves, allowing for real-time monitoring and measurement of wire positioning. This feedback mechanism ensures that even with a simplified process structure, the manufacturing precision is maintained by detecting and correcting any deviations in wire alignment during the cutting operation.
Solution Approach 2:
The patent replaces complex mechanical alignment systems with an imaging-based measurement system. Instead of relying on purely mechanical methods to ensure wire positioning accuracy, the system uses optical imaging and image processing to detect and measure wire positions, providing a more precise and easily controllable method for maintaining manufacturing quality.
4Productivity
If wires are not accurately positioned in concave grooves, then cutting speed may increase, but manufacturing precision deteriorates
Solution Approach 1:
The imaging means provides real-time feedback on wire positioning by capturing images of the wires in the concave grooves. This allows for precise measurement of wire positions and detection of any deviation from the desired alignment, enabling adjustments to be made to maintain both cutting speed and accuracy.
Solution Approach 2:
The patent replaces complex mechanical positioning systems with an imaging-based measurement and control system. By using optical imaging to detect wire positions and calculate deviation angles, the system achieves precise wire alignment without requiring complex mechanical adjustment mechanisms, thereby maintaining both high cutting speed and high precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the production of high-quality semiconductor crystal wafers with simplified processes by accurately cutting semiconductor ingots into slices, reducing manufacturing complexity and cost while ensuring high precision.
Implementation Method 1
an imaging means, which is provided in the wire saw device at a position facing an ingot supporting means that supports the semiconductor crystal ingot across the plurality of wires, so as to image the plurality of wires disposed in the plurality of concave grooves
Implementation Method 2
a wire saw device configured for cutting the semiconductor crystal ingot into slices by advancing a plurality of wires disposed in the plurality of concave grooves while making the plurality of wires revolve
Implementation Method 3
a groove machining drum grindstone configured for forming a plurality of concave grooves surrounding an entire side surface of the semiconductor crystal ingot
Data Source
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AI summary
The purpose of the present invention is to provide a device and a method for manufacturing semiconductor crystal wafer, the device and the method being capable of easily and reliably manufacture semiconductor crystal wafers of high-quality. This manufacturing method for a SiC wafer which is a semiconductor crystal wafer, includes: a groove machining step (STEP 100/FIG. 1), a polishing step (STEP 110/FIG. 1), a cutting step (STEP 120/FIG. 1), a first surface machining step (STEP 130/FIG. 1), and a second surface machining step (STEP 140/FIG. 1), wherein in the cutting step, before a SiC ingot 10 is cut into slices by advancing a plurality of wires 42 arranged in a plurality of concave grooves 11 while making them revolving, a deviation angle of the plurality of wires 42 with respect to the plurality of concave grooves 11 is detected from an image captured by an imaging means 44 that is provided at a position facing an ingot supporting unit 43 that supports the SiC ingot 10 across the plurality of wires 42 and captures an image of the plurality of wires 42 disposed in the plurality of concave grooves 11, and the deviation angle is adjusted to zero.