SiC WL-CSP Electrode Sealing Structure for Higher Reliability
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Solution Overview
Problem
Existing semiconductor device manufacturing methods for wafer-level chip scale packaging (WL-CSP) do not adequately address the reliability of devices using silicon carbide (SiC) semiconductor substrates, which are known for smaller scale, reduced power consumption, and increased efficiency compared to silicon.
Innovation Solution
A semiconductor device and manufacturing method that include an SiC semiconductor substrate with a diffusion layer, a first electrode, a second electrode, and a resin section of the same size as the substrate to seal the second electrode, using materials like Al and Cu, and employing photolithography and electroplating techniques to form the electrodes and resin sections, respectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional WL-CSP manufacturing methods are used for SiC substrates, then manufacturing process simplicity is maintained, but device reliability deteriorates
Solution Approach 1:
The patent applies preliminary action by forming a protective resin section and mask structure before completing the electrode formation process. This preliminary protective structure prevents damage to the SiC substrate and previously formed electrodes during subsequent manufacturing steps, thereby improving reliability without significantly complicating the overall manufacturing process
Solution Approach 2:
The patent implements beforehand cushioning by creating a resin section that seals and protects the second electrode before the manufacturing process is complete. This protective cushioning structure prevents harmful factors from affecting the electrode and substrate, improving device reliability while maintaining manufacturing feasibility
2Use of energy by moving object
If SiC semiconductor substrate is used, then power consumption is reduced and efficiency is increased, but manufacturing method compatibility deteriorates
Solution Approach 1:
The patent applies parameter changes by modifying the manufacturing process parameters to be compatible with SiC substrates. Specifically, the process uses photolithography and electroplating with parameters optimized for SiC material properties, allowing the manufacturing method to adapt to SiC while maintaining the energy efficiency and performance benefits of the SiC substrate
3Reliability
If second electrode is formed on first electrode, then electrical functionality is improved, but manufacturing precision requirements increase
Solution Approach 1:
The patent uses preliminary action by forming a mask structure and protective resin section before depositing the second electrode. This preliminary structuring provides precise alignment guides and protective boundaries that ensure accurate second electrode formation on the first electrode, improving electrical functionality while managing precision requirements through process design rather than relying solely on high-precision deposition
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Improves the reliability of SiC-based semiconductor devices in WL-CSP by enhancing mechanical strength and reducing ON-state resistance, while allowing for reduced power consumption and efficient packaging through the use of specific resin materials and electrode configurations.
Implementation Method 1
an SiC semiconductor substrate including a diffusion layer
Implementation Method 2
employing photolithography and electroplating techniques to form the electrodes
Data Source
AI summary
A semiconductor device includes an SiC semiconductor substrate including a diffusion layer, a first electrode provided on the SiC semiconductor substrate, a second electrode provided on the first electrode, and a resin section that is substantially the same size in a plan view as the SiC semiconductor substrate, and that is configured to seal in the second electrode.